2SD1974ESTR [HITACHI]
暂无描述;型号: | 2SD1974ESTR |
厂家: | HITACHI SEMICONDUCTOR |
描述: | 暂无描述 |
文件: | 总7页 (文件大小:37K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SD1974
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
2, 4
1
2
3
1
ID
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
3
2SD1974
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
25
25
V
6
V
0.8
A
Collector peak current
E to C diode forward current
Collector power dissipation
Junction temperature
Storage temperature
ic (peak)
1.5
A
ID
0.6
A
PC*1
Tj
1.0
W
°C
°C
150
Tstg
–55 to +150
Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
25
25
6
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
35
35
—
V
V
V
IC = 1 mA, RBE = ∞
Collector to emitter sustaining VCEO(sus)
voltage
IC = 0.8 A, RBE = ∞,
L = 20 mH
Emitter to base breakdown
voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
ICEO
IEBO
hFE
—
—
—
—
—
—
0.2
µA
µA
µA
VCB = 20 V, IE = 0
—
0.5
VCE = 20 V, RBE = ∞
Emitter cutoff current
—
0.2
VEB = 5 V, IC = 0
DC current transfer ratio
250
—
1200
0.4
VCE = 2 V, IC = 0.1 A*1
IC = 0.8 A, IB = 80 mA*1
Collector to emitter saturation VCE(sat)
voltage
V
V
E to C diode forward voltage
VD
—
—
1.5
ID = 0.6 A*1
Notes: 1. Pulse test
2. Marking is “ES”.
2
2SD1974
Area of Safe Operation
Maximum Collector Dissipation Curve
10
1.2
0.8
0.4
3
iC(peak)
1.0
IC(max)
0.3
0.1
0.03
0.01
Ta = 25°C
1 Shot Pulse
0.01 0.3
1.0
3
10
30
100
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Area of Safe Operation of
Emitter to Collector Diode
Typical Output Characteristics
1.0
0.8
0.6
0.4
0.2
10
Ta = 25°C
1 Shot Pulse
8
6
4
2
0
IB = 0
Ta = 25°C
0.1
0.3
1.0
3
10
0
2
4
6
8
10
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
3
2SD1974
Saturation Voltage vs.
Collector Current
Typical Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
10
IC = 10 IB
Ta = 25°C
Pulse
3
1.0
0.3
0.1
VCE = 2 V
Ta = 25°C
Pulse
0.03
0.01
0
0.4
0.8
1.2
1.6
2.0
0.001 0.003 0.01 0.03
0.1 0.3
1.0
Base to Emitter Voltage VBE (V)
Collector Current IC (A)
DC Current Transfer Ratio vs.
Collector Current
Typical Characteristics of
Emitter to Collector Diode
10,000
1.0
0.8
0.6
0.4
0.2
VCE = 2 V
Pulse
3,000
1,000
25
Ta = 75°C
–25
300
100
Ta = 25°C
Pulse
30
10
0.001 0.003 0.01 0.03
0.1 0.3
1.0
0
0.4
0.8
1.2
1.6
2.0
Collector Current IC (A)
Emitter to Collector Forward Voltage VD (V)
4
2SD1974
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
Ta = 25°C
f = 1 MHz
300
100
I
E = 0
30
10
3
1
0.3
1.0
3
10
30
Collector to Base Voltage VCB (V)
5
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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: http:semiconductor.hitachi.com/
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Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Hitachi Asia Pte. Ltd.
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Hitachi Tower
Singapore 049318
Tel: 535-2100
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Germany
Tel: <49> (89) 9 9180-0
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Fax: 535-1533
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
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Telex: 40815 HITEC HX
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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