2SD1974ESUL [HITACHI]
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3;
| 型号： | 2SD1974ESUL |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3 |
| 文件： | 总7页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1974
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
2, 4
1
2
3
1
ID
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
3
2SD1974
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
25
25
V
6
V
0.8
A
Collector peak current
E to C diode forward current
Collector power dissipation
Junction temperature
Storage temperature
ic (peak)
1.5
A
ID
0.6
A
PC*1
Tj
1.0
W
°C
°C
150
Tstg
–55 to +150
Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
25
25
25
6
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
35
35
—
V
V
V
IC = 1 mA, RBE = ∞
Collector to emitter sustaining VCEO(sus)
voltage
IC = 0.8 A, RBE = ∞,
L = 20 mH
Emitter to base breakdown
voltage
V(BR)EBO
IE = 10 µA, IC = 0
Collector cutoff current
ICBO
ICEO
IEBO
hFE
—
—
—
—
—
—
0.2
µA
µA
µA
VCB = 20 V, IE = 0
—
0.5
VCE = 20 V, RBE = ∞
Emitter cutoff current
—
0.2
VEB = 5 V, IC = 0
DC current transfer ratio
250
—
1200
0.4
VCE = 2 V, IC = 0.1 A*1
IC = 0.8 A, IB = 80 mA*1
Collector to emitter saturation VCE(sat)
voltage
V
V
E to C diode forward voltage
VD
—
—
1.5
ID = 0.6 A*1
Notes: 1. Pulse test
2. Marking is “ES”.
2
2SD1974
Area of Safe Operation
Maximum Collector Dissipation Curve
10
1.2
0.8
0.4
3
iC(peak)
1.0
IC(max)
0.3
0.1
0.03
0.01
Ta = 25°C
1 Shot Pulse
0.01 0.3
1.0
3
10
30
100
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Area of Safe Operation of
Emitter to Collector Diode
Typical Output Characteristics
1.0
0.8
0.6
0.4
0.2
10
Ta = 25°C
1 Shot Pulse
8
6
4
2
0
IB = 0
Ta = 25°C
0.1
0.3
1.0
3
10
0
2
4
6
8
10
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
3
2SD1974
Saturation Voltage vs.
Collector Current
Typical Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
10
IC = 10 IB
Ta = 25°C
Pulse
3
1.0
0.3
0.1
VCE = 2 V
Ta = 25°C
Pulse
0.03
0.01
0
0.4
0.8
1.2
1.6
2.0
0.001 0.003 0.01 0.03
0.1 0.3
1.0
Base to Emitter Voltage VBE (V)
Collector Current IC (A)
DC Current Transfer Ratio vs.
Collector Current
Typical Characteristics of
Emitter to Collector Diode
10,000
1.0
0.8
0.6
0.4
0.2
VCE = 2 V
Pulse
3,000
1,000
25
Ta = 75°C
–25
300
100
Ta = 25°C
Pulse
30
10
0.001 0.003 0.01 0.03
0.1 0.3
1.0
0
0.4
0.8
1.2
1.6
2.0
Collector Current IC (A)
Emitter to Collector Forward Voltage VD (V)
4
2SD1974
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
Ta = 25°C
f = 1 MHz
300
100
I
E = 0
30
10
3
1
0.3
1.0
3
10
30
Collector to Base Voltage VCB (V)
5
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
Weight (reference value) 0.050 g
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