2SC5850C [RENESAS]
TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323;
| 型号： | 2SC5850C |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,BJT,NPN,40V V(BR)CEO,100MA I(C),SOT-323 |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
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Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
2SC5850
Silicon NPN Epitaxial
ADE-208-1479 (Z)
Rev.0
Feb. 2002
Features
•
Low frequency amplifier
Outline
CMPAK
3
1
1. Emitter
2. Base
2
3. Collector
2SC5850
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
50
40
V
5
V
100
mA
mA
mW
°C
°C
Emitter current
IE
–100
Collector power dissipation
Junction temperature
Storage temperature
PC*
150
Tj
150
Tstg
–55 to +125
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit Test conditions
Collector to base breakdown
voltage
V(BR)CBO
50
V
V
V
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Collector to emitter breakdown
voltage
V(BR)CEO
V(BR)EBO
40
5
Emitter to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
0.5
0.5
500
0.2
µA
µA
V
VCB = 30 V, IE = 0
IEBO
hFE*1
VEB = 2 V, IC = 0
100
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
Collector to emitter saturation
voltage
VCE(sat)
Base to emitter voltage
VBE
0.75
V
VCE = 12 V, IC = 2 mA
Notes: 1. The 2SC5850 is grouped by hFE as follows.
Grade
Mark
hFE
B
C
D
LB
LC
LD
100 to 200
160 to 320
250 to 500
Rev.0, Feb. 2002, page 2 of 6
2SC5850
Maximum Collector Dissipation Curve
Typical Output Characteristics
150
100
50
10
8
6
4
2
0
*Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
Pulse test
10
Collector to Emitter Voltage V
I
= 0
B
5
15
20
CE
25
(V)
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
300
200
5
4
3
2
1
V
= 12 V
CE
Pulse test
V
= 12 V
CE
100
0
0.03 0.1 0.3
1.0
3
10
(mA)
30
0
0.2
0.4
0.6
0.8
BE
1.0
Base to Emitter Voltage
V
(V)
Collector Current
I
C
Rev.0, Feb. 2002, page 3 of 6
2SC5850
Collector Output Capacitance vs.
Collector to Base Voltage
Base to Emitter Voltage vs.
Ambient Temperature
5
0.9
0.8
0.7
0.6
0.5
I = 0
E
f = 1 MHz
V
= 12 V
CE
I
= 2 mA
C
4
3
2
1
0.4
0
4
8
12
16
20
(V)
–20
0
20
40
60
80
Collector to Base Voltage
V
CB
Ambient Temperature Ta (°C)
Emitter Input Capacitance vs.
Emitter to Base Voltage
5
4
3
2
1
I
C
= 0
f = 1 MHz
0
2
4
6
8
10
Emitter to Base Voltage V
(V)
EB
Rev.0, Feb. 2002, page 4 of 6
2SC5850
Package Dimensions
As of July, 2001
Unit: mm
2.0 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
0.65
0.65
1.3 0.2
Hitachi Code
JEDEC
CMPAK
—
JEITA
Mass (reference value)
Conforms
0.006 g
Rev.0, Feb. 2002, page 5 of 6
2SC5850
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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For further information write to:
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(America) Inc.
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Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, Feb. 2002, page 6 of 6
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