PSTD82 [POWERSEM]

Three Phase Rectifier Bridge (TRACTION - PACTM); 三相整流桥(牵引力 - PACTM )
PSTD82
型号: PSTD82
厂家: POWERSEM GMBH    POWERSEM GMBH
描述:

Three Phase Rectifier Bridge (TRACTION - PACTM)
三相整流桥(牵引力 - PACTM )

三相整流桥
文件: 总2页 (文件大小:155K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Three Phase  
PSTD 82  
IdAV  
= 88 A  
Rectifier Bridge  
(TRACTION - PACTM)  
VRRM  
= 800-1800V  
Preliminary Data Sheet  
VRSM VRRM  
VDSM VDRM  
Type  
(V)  
(V)  
800 800 PSTD 82/08  
1200 1200 PSTD 82/12  
1400 1400 PSTD 82/14  
1600 1600 PSTD 82/16  
1800 1800 PSTD 82/18  
Features  
Package with screw terminals  
Isolation voltage 3000 V  
Symbol  
IdAVM  
Test Conditions  
Maximum Ratings  
Planar glass passivated chips  
Blocking voltage up to 1800 V  
Low forward voltage drop  
TC = 110 °C, (per module)  
88  
750  
820  
670  
740  
A
A
A
A
A
IFSM  
TVJ = 45 °C t = 10 ms (50 Hz), sine  
VR = 0  
TVJ = TVJM  
VR = 0  
t = 8.3 ms (60 Hz), sine  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
Applications  
Supplies for DC power equipment  
Input rectifier for PWM inverter  
Battery DC power supplies  
i2 dt  
TVJ = 45 °C t = 10 ms (50 Hz), sine  
2800  
2800  
2250  
2250  
A²s  
Field supply for DC motors  
VR = 0  
TVJ = TVJM  
VR = 0  
t = 8.3 ms (60 Hz), sine  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
A²s  
A²s  
A²s  
Advantages  
Easy to mount with two screws  
Space and weight savings  
Improved temperature and power  
cycling capability  
TVJ  
-40... + 150  
150  
-40... + 125  
°C  
°C  
°C  
TVJM  
Tstg  
Package style and outline  
VISOL  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V
V
Dimensions in mm (1mm = 0.0394“)  
IISOL 1 mA  
t = 1 s  
Md  
Mounting torque  
Terminal connection torque (M5)  
typ.  
(M5)  
5.0/44 Nm/lb.in.  
3.0/26 Nm/lb.in.  
Weight  
170  
g
Symbol  
IR  
Test Conditions  
VR = VRRM, TVJ = 25°C  
VR = VRRM, TVJ = TVJM  
Characteristic Value  
0.3  
5
mA  
mA  
V
VF  
VTO  
rT  
IF = 150 A,  
TVJ = 25 °C  
1.6  
0.8  
5
For power-loss calculations only  
V
mΩ  
RthJC  
per diode; DC current  
per module  
per diode; DC current  
1.1  
0.183  
1.52  
K/W  
K/W  
K/W  
RthJK  
per module  
0.253  
K/W  
ds  
dA  
a
Creeping distance on surface  
Creeping distance in air  
10.0  
9.4  
50  
mm  
mm  
m/s²  
Max. allowable acceleration  
Data according to IEC 60747 refer to a single diode unless otherwise stated  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  
PSTD 82  
Fig. 3 i2dt versus time (1-10ms)  
per diode (or thyristor)  
Fig. 1 Forward current versus  
voltage drop per diode  
Fig. 2 Surge overload current per  
diode IFSM: Crest value. t: duration  
PSTD 82  
Fig.5 Maximum forward current at  
case temperature  
Fig. 4 Power dissipation versus direct output  
current and ambient temperature  
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated  
POWERSEM GmbH, Walpersdorfer Str. 53  
D - 91126 Schwabach  
2005 POWERSEM reserves the right to change limits, test conditions and dimensions  
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20  

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