PSTG25HTT [POWERSEM]
PSTG25HTT;
POWERSEM GMBH 
ECO-PACTM 1
Powerline N-Channel
Trench Gate-
PSTG 25HTT12
VCES
= 1200 V
IGBT Triple Module
VCE(sat) = 1.9 V
IC25
IC75
ICM
tSC
= 35 A
= 25 A
= 75 A
= 10 µs
Preliminary Data Sheet
Features
Symbol Test Conditions
Maximum Ratings
TVJ = 25°C to 150°C
continous
1200
±20
35
V
V
A
A
A
VCES
VGES
IC25
• Package with DCB ceramic base
plate and soldering pins for PCB
mounting
TC = 25°C;
TC = 75°C;
TC = 75°C;
TC = 75°C
VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V
TVJ = 125°C, non-repetitive
25
75
IC75
• Isolation voltage over 3000 V∼
• Trench Gate
ICM
• Enhancement Mode N-Channel
Device
45
W
Ptot
tSC
• Non Punch through Structure
• High Switching Speed
• Low On-state Saturation Voltage
• High Input Impedance Simplifies
Gate Drive
10
-40...+150
-40...+125
1.65
µs
°C
°C
K/W
K/W
V~
TVJ
Tstg
IGBT-per devices
Diode-per devices
RthJC
RthJC
VISOL
4.0
3000
• Latch-Free Operation
• Fully Short Circuit Rated to 10 µs
• Wide RBSOA
IISOL ≤ 1 mA, 50/60 Hz, t= 1 min.
Mounting torque (M4)
1.5-1.8
Nm
MD
typ.
min.
11.2
4.0
Applications
Creepage distance on surface
Strike distance through air
typ.
mm
mm
g
dS
• High Frequency Inverters
• Motor Control
dA
18
Weight
• Switch Mode Power Supplies
• High Frequency Welding
• UPS Systems
• PWM Drives
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling
precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSTG 25HTT12
Symbol Test Conditions
Characteristic Value
typ.
max.
0.6
3
VCE = VCES, VGE = 0 V, TVJ = 25°C
mA
mA
ICES
TVJ = 125°C
1.5
2.3
µA
V
V
VCE = 0 V, VGE = ±20 V
IC = 25A, VGE = 15 V
IGES
VCE(sat)
TVJ = 25°C
TVJ = 125°C
1.9
2.1
IC = 10A, VGE = VCE
min. 3
170
17
340
60
2
3.5
12000
510
5
V
VGE(th)
td(on)
tr
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
Inductive load, TVJ = 125°C
VCE = 50% VCEs, IC = 25 A
RG = 5 Ω, VGE = ±15 V
td(off)
tf
Eon
Eoff
VCE = 75 V, VGE = 15 V, f= 1 MHz
VCE = 75 V, VGE = 15 V, f= 1 MHz
VCE = 75 V, VGE = 15 V, f= 1 MHz
Cies
Coes
Cies
75
0.96
K/W
K/W
RthJC
RthJS
with heat transfer paste
tbd
NTC
25°C
470
kΩ
Package style and outline
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
相关型号：
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