PSTKD82 [POWERSEM]
High Voltage Diode Module; 高压二极管模块
| 型号： | PSTKD82 |
| 厂家： | 
POWERSEM GMBH |
| 描述： | High Voltage Diode Module |
| 文件： | 总3页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IFRMS
IFAVM
=
=
180 A
82 A
High Voltage Diode Module
(TRACTION - PACTM)
PSTKD 82
VRRM = 600-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
700
900
600
800
PSTKD 82/06
PSTKD 82/08
PSTKD 82/10
PSTKD 82/12
PSTKD 82/14
PSTKD 82/16
PSTKD 82/18
~
-
+
2
1
3
1100
1300
1500
1700
1900
1000
1200
1400
1600
1800
Features
●
International standard package,
Symbol
Test Conditions
Maximum Ratings
JEDEC TO-240 AA
●
Direct Copper Bonded Al2O3 -ceramic
IFRMS
IFAVM
T
= TVJM
180
82
A
A
TCVJ= 110°C; 180° sine
base plate
●
Planar passivated chips
l●
ITSM
T
= 45°C;
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
1700
1950
A
A
Isolation voltage 3600 V~
VVRJ= 0
Applications
T
= T
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
1530
1740
A
A
VVRJ= 0 VJM
●
Supplies for DC power equipment
●
òi2dt
T
= 45°C
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
14450
15700
A2s
DC supply for PWM inverter
VVRJ= 0
A2s
●
Field supply for DC motors
●
Battery DC power supplies
T
= T
t = 10 ms (50 Hz)
t = 8.3 ms (60 Hz)
11700
12500
A2s
A2s
VVRJ= 0 VJM
Advantages
TVJ
-40 ...125
125
°C
°C
°C
●
Space and weight savings
TVJM
Tstg
●
Simple mounting with two screws
-40 ...125
●
Improved temperature and power
VISOL
50/60 Hz, RMS t = 1 min
3000
3600
V~
V~
cycling
●
Reduced protection circuits
I
ISOL ≤ 1 mA
t = 1 s
Md
Mounting torque (M5)
5.0/44 Nm/lb.in.
3.0/26 Nm/lb.in.
Dimensions in mm (1 mm = 0.0394")
Terminal connection torque (ISK M5)
Typical including screws
Weight
56
g
Symbol
IRRM, IDRM
VT
Test Conditions
Characteristic Values
TVJ = TVJM; VR = VRRM
IT = 200 A; TVJ = 25°C
15
mA
V
1.74
V
For power-loss calculations only (TVJ = TVJM
TVJ = TVJM
)
0.8
2.7
V
rTT0
mΩ
QS
IRM
TVJ = 125 °C; IF=50 A, -di/dt = 3 A/µs
170
45
µC
A
RthJC
per diode; DC current
per module
0.35
0.18
0.55
0.275
12.7
9.6
K/W
K/W
K/W
K/W
mm
RthJK
per diode; DC current
per module
d
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
dS
mm
aA
50
m/s2
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSTKD 82
t
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSTKD 82
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
180°
120°
60°
0.35
0.37
0.39
0.43
0.47
30°
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
2
3
0.013
0.072
0.265
0.0014
0.062
0.375
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d
RthJK (K/W)
DC
180°
120°
60°
0.55
0.57
0.59
0.63
0.67
30°
Constants for ZthJK calculation:
i
Rthi (K/W)
ti (s)
1
2
3
4
0.013
0.072
0.265
0.2
0.0014
0.062
0.375
1.32
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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