PSTG25HDT [POWERSEM]
Powerline N-Channel Trench Gate-IGBT Module; 电力线的N沟道沟槽栅-IGBT模块
| 型号： | PSTG25HDT |
| 厂家： | 
POWERSEM GMBH |
| 描述： | Powerline N-Channel Trench Gate-IGBT Module |
| 文件： | 总2页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ECO-PACTM 1
Powerline N-Channel
Trench Gate-
PSTG 25HDT12
VCES
= 1200 V
IGBT Module
VCE(sat) = 1.9 V
IC25
IC75
ICM
tSC
= 35 A
= 25 A
= 75 A
= 10 µs
Preliminary Data Sheet
G
N TC
H
C
M
B A
N
L
Features
Symbol Test Conditions
Maximum Ratings
TVJ = 25°C to 150°C
continous
1200
±20
35
V
V
A
A
A
VCES
VGES
IC25
• Package with DCB ceramic base
plate and soldering pins for PCB
mounting
TC = 25°C;
TC = 75°C;
TC = 75°C;
TC = 75°C
VCE = 80 VCES, RG = 10 Ω, VGE = ±15 V
TVJ = 125°C, non-repetitive
25
75
IC75
• Isolation voltage over 3000 V∼
• Trench Gate
ICM
• Enhancement Mode N-Channel
Device
45
W
Ptot
tSC
• Non Punch through Structure
• High Switching Speed
• Low On-state Saturation Voltage
• High Input Impedance Simplifies
Gate Drive
10
-40...+150
-40...+125
1.65
µs
°C
°C
K/W
K/W
V~
TVJ
Tstg
IGBT-per devices
Diode-per devices
RthJC
RthJC
VISOL
4.0
3000
• Latch-Free Operation
• Fully Short Circuit Rated to 10 µs
• Wide RBSOA
IISOL ≤ 1 mA, 50/60 Hz, t= 1 min.
180° sine
Mounting torque (M4)
1.5-1.8
Nm
MD
typ.
min.
11.2
4.0
Applications
Creepage distance on surface
Strike distance through air
typ.
mm
mm
g
dS
• High Frequency Inverters
• Motor Control
dA
16
Weight
• Switch Mode Power Supplies
• High Frequency Welding
• UPS Systems
• PWM Drives
Caution: These devices are sensitive to electrostatic discharge. Users should observe proper ESD handling
precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSTG 25HDT12
Symbol Test Conditions
Characteristic Value
typ.
max.
0.2
1
VCE = VCES, VGE = 0 V, TVJ = 25°C
mA
mA
ICES
TVJ = 125°C
500
2.3
nA
V
V
VCE = 0 V, VGE = ±20 V
IC = 25A, VGE = 15 V
IGES
TVJ = 25°C
TVJ = 125°C
1.9
2.1
7
170
17
340
60
2
VCE(sat)
IC = 25A, VGE = VCE
V
VGE(th)
td(on)
tr
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
Inductive load, TVJ = 125°C
VCE = 50% VCEs, IC = 25 A
RG = 5 Ω, VGE = ±15 V
td(off)
tf
Eon
Eoff
3.5
VCE = 75 V, VGE = 15 V, f= 1 MHz
VCE = 75 V, VGE = 15 V, f= 1 MHz
VCE = 75 V, VGE = 15 V, f= 1 MHz
8000
340
50
Cies
Coes
Cies
VFM
IF = 25 A,
TVJ = 25°C
TVJ = 125°C
1.9
1.92
90
V
ns
A
IF = 25 A, diRR / dt = 200 A/µs,
VR = 50% VRRM
trr
IRRM
12
NTC
25°C
470
kΩ
Package style and outline
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
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