LN66F [PANASONIC]
GaAs Infrared Light Emitting Diode; 砷化镓红外发光二极管
| 型号： | LN66F |
| 厂家： | 
PANASONIC |
| 描述： | GaAs Infrared Light Emitting Diode |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
Unit : mm
ø5.0±0.2
For light source of remote control systems
Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Narrow directivity : θ = 15 deg. (typ.)
2-1.0±0.15
2-0.6±0.15
Transparent epoxy resin package
2.54
Absolute Maximum Ratings (Ta = 25˚C)
2
1
Parameter
Symbol
Ratings
Unit
mW
mA
A
1: Cathode
2: Anode
Power dissipation
PD
IF
75
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
50
1.5
*
IFP
VR
Topr
Tstg
3
V
–25 to +85
– 40 to +100
˚C
˚C
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
mW/sr
nm
Radiant intensity at center
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Pulse forward voltage
Reverse current (DC)
Capacitance between pins
Half-power angle
Ie
IF = 50mA
13
λP
∆λ
VF
IF = 50mA
950
50
IF = 50mA
nm
IF = 50mA
1.35
1.50
3.0
10
V
*
VFP
IFP = 1.0A
V
IR
Ct
θ
VR = 3V
µA
VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
20
15
pF
deg.
*
f = 100 Hz, Duty cycle = 0.1 %
1
Infrared Light Emitting Diodes
LN66F
IF — Ta
I
FP — Duty cycle
IF — VF
60
80
70
60
50
40
30
20
10
0
tw = 10µs
Ta = 25˚C
10 2
10
1
Ta = 25˚C
50
40
30
10 –1
10 –2
20
10
0
10 –3
– 25
0
20
40
60
80
100
10 –2
10 –1
1
10
10 2
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆Ie — IFP
VF — Ta
∆Ie — Ta
1.6
1.2
0.8
0.4
0
10
(1) tw = 10µs
f = 100Hz
(2) DC
IF = 50mA
10 3
10 2
IF = 50mA
10mA
Ta = 25˚C
(1)
10
1
1
(2)
10 –1
10 –2
10 –1
– 40
1
10
10 2
10 3
10 4
– 40
0
40
80
120
0
40
80
120
Pulse forward current IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
Spectral characteristics
Directivity characteristics
0˚
100
10˚
20˚
1000
980
960
940
920
900
100
80
60
40
20
0
I
F = 50mA
IF = 50mA
Ta = 25˚C
90
80
70
60
50
40
30
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
– 40
0
40
80
120
860 900 940 980 1020 1060 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
LN66F
Infrared Light Emitting Diodes
Frequency characteristics
10
1
Ta = 25˚C
10 –1
10 –2
10 –3
10
10 2
10 3
10 4
Frequency f (kHz)
3
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