LN66L [PANASONIC]
GaAs Infrared Light Emitting Diode; 砷化镓红外发光二极管
| 型号： | LN66L |
| 厂家： | 
PANASONIC |
| 描述： | GaAs Infrared Light Emitting Diode |
| 文件： | 总3页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Light Emitting Diodes
LN66L
GaAs Infrared Light Emitting Diode
Unit : mm
ø5.0±0.2
For optical control systems
Features
High-power output, high-efficiency :PO = 8 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity : θ = 25 deg. (typ.)
2-0.8 max.
2-0.6±0.15
Transparent epoxy resin package
Long lead-wire type
2.54
Absolute Maximum Ratings (Ta = 25˚C)
2
1
Parameter
Symbol
Ratings
Unit
mW
mA
A
1: Cathode
2: Anode
Power dissipation
PD
IF
160
100
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
IFP
1.5
VR
Topr
Tstg
3
V
–25 to +85
– 40 to +100
˚C
˚C
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Symbol
Conditions
min
typ
8
max
Unit
mW
nm
nm
V
*
PO
IF = 50mA
5
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
λP
∆λ
VF
IR
IF = 50mA
950
50
IF = 50mA
IF = 100mA
1.3
1.6
10
VR = 3V
µA
pF
Ct
θ
VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
35
25
deg.
* PO Classifications
Class
R
S
PO (mW)
5 to 8
>7
1
LN66L
Infrared Light Emitting Diodes
IF — Ta
I
FP — Duty cycle
IF — VF
120
100
80
120
tw = 10µs
Ta = 25˚C
10 2
10
Ta = 25˚C
100
80
60
40
20
0
1
60
10 –1
40
10 –2
20
0
– 25
10 –3
10 –2
0
20
40
60
80
100
10 –1
1
10
10 2
0
0.4
0.8
1.2
1.6
2.0
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆PO — IFP
VF — Ta
∆PO — Ta
1.6
1.2
0.8
0.4
0
10
(1) tw = 10µs
f = 100Hz
(2) DC
10 3
IF = 50mA
Ta = 25˚C
IF = 100mA
10 2
10
50mA
10mA
1
(1)
(2)
1
10 –1
10 –1
10 –2
10 –2
– 40
1
10
10 2
10 3
10 4
– 40
0
40
80
120
0
40
80
120
Pulse forward current IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
Spectral characteristics
Directivity characteristics
0˚
100
10˚
20˚
1000
980
960
940
920
900
100
80
60
40
20
0
I
F = 50mA
IF = 50mA
Ta = 25˚C
90
80
70
60
50
40
30
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
– 40
0
40
80
120
860 900 940 980 1020 1060 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
Infrared Light Emitting Diodes
LN66L
Frequency characteristics
10
Ta = 25˚C
1
10 –1
10 –2
10 –3
10
10 2
10 3
10 4
Frequency f (kHz)
3
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