LN671 [PANASONIC]

GaAlAs Infrared Light Emitting Diode; GaAlAs的红外发光二极管
LN671
型号: LN671
厂家: PANASONIC    PANASONIC
描述:

GaAlAs Infrared Light Emitting Diode
GaAlAs的红外发光二极管

二极管
文件: 总2页 (文件大小:46K)
中文:  中文翻译
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Infrared Light Emitting Diodes  
LN671  
GaAlAs Infrared Light Emitting Diode  
5.3 max.  
5.0±0.1  
Unit : mm  
1.8±0.3  
Light source for distance measuring systems  
2.54±0.1  
0.8±0.2  
4
3
Features  
Epin ø3.2  
High-power output, high-efficiency : PO = 10 mW (typ.)  
Fast response and high-speed modulation capability :  
tr, tf = 30 ns(typ.)  
1 0 ˚  
10˚  
Small plastic package  
+0.1  
4-0.6  
–0.2  
+0.1  
0.2  
–0.05  
4-0.5±0.15  
1
2
10˚  
10˚  
Absolute Maximum Ratings (Ta = 25˚C)  
5˚  
1: Anode  
2: Common Cathode  
3: NC  
Parameter  
Symbol  
Ratings  
Unit  
mW  
mA  
A
4: Common Cathode  
Power dissipation  
PD  
130  
Forward current (DC)  
Pulse forward current  
Reverse voltage (DC)  
Operating ambient temperature  
Storage temperature  
IF  
70  
*
IFP  
1
VR  
Topr  
Tstg  
3
V
–25 to +85  
–30 to +100  
˚C  
˚C  
*
f = 100 Hz, Duty cycle = 0.1 %  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
Conditions  
min  
typ  
max  
Unit  
mW  
nm  
nm  
V
PO  
λP  
∆λ  
VF  
IR  
tr  
IF = 50mA  
6
10  
Peak emission wavelength  
Spectral half band width  
Forward voltage (DC)  
Reverse current (DC)  
Rise time  
IF = 50mA  
880  
50  
IF = 50mA  
IF = 50mA  
1.4  
1.8  
10  
VR = 3V  
µA  
ns  
IFP = 50mA  
IFP = 50mA  
The angle in which radiant intencity is 50%  
30  
30  
50  
Fall time  
tf  
ns  
Half-power angle  
θ
deg.  
1
LN671  
Infrared Light Emitting Diodes  
IF — Ta  
I
FP — Duty cycle  
I
FP — VFP  
120  
100  
80  
t
w = 10µs  
tw = 10µs  
Ta = 25˚C  
10 2  
10  
10 3  
f = 100Hz  
Ta = 25˚C  
10 2  
10  
1
60  
10 –1  
1
40  
10 –2  
10 –1  
10 –2  
20  
0
– 25  
10 –3  
10 –2  
0
20  
40  
60  
80  
100  
10 –1  
1
10  
10 2  
0
1
2
3
4
5
Ambient temperature Ta (˚C )  
Duty cycle (%)  
Pulse forward voltage VFP (V)  
PO — IFP  
VF — Ta  
PO — Ta  
2.2  
1.8  
1.4  
1.0  
0.6  
10  
(1) tw = 10µs  
f = 100Hz  
(2) DC  
IF = 50mA  
10 3  
IF = 50mA  
Ta = 25˚C  
10 2  
10  
(1)  
1
(2)  
1
10 –1  
10 –2  
10 –1  
– 40  
1
10  
10 2  
10 3  
10 4  
– 40  
0
40  
80  
120  
0
40  
80  
Pulse forward current IFP (mA)  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
λP — Ta  
Spectral characteristics  
Directivity characteristics  
0˚ 10˚ 20˚  
920  
900  
880  
860  
840  
820  
100  
80  
60  
40  
20  
0
I
F = 50mA  
IF = 50mA  
Ta = 25˚C  
100  
90  
80  
30˚  
40˚  
70  
60  
50  
40  
30  
20  
50˚  
60˚  
70˚  
80˚  
90˚  
– 40  
0
40  
80  
120  
750 800 850 900 950 1000 1050  
Ambient temperature Ta (˚C )  
Wavelength λ (nm)  
2

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