LN69 [PANASONIC]
GaAs Infrared Light Emitting Diode; 砷化镓红外发光二极管
| 型号： | LN69 |
| 厂家： | 
PANASONIC |
| 描述： | GaAs Infrared Light Emitting Diode |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Light Emitting Diodes
LN69
GaAs Infrared Light Emitting Diode
Unit : mm
ø3.6±0.2
ø3.0±0.2
For optical control systems
Features
High-power output, high-efficiency : Ie = 3.5 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
2-0.8 max.
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
2-0.5±0.1
ø3 plastic package
2
0.5±0.1
1
2.54
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
ratings
Unit
mW
mA
A
1: Anode
2: Cathode
Power dissipation
PD
IF
75
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
50
*
IFP
1
VR
Topr
Tstg
3
V
–25 to +85
– 40 to +100
˚C
˚C
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
mW/sr
nm
Cente radiant Intensity
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Half-power angle
Ie
λP
∆λ
VF
IR
IF = 20mA
3.5
IF = 50mA
940
50
IF = 50mA
nm
IF = 50mA
1.3
1.5
10
V
VR = 3V
µA
Ct
θ
VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
35
15
pF
deg.
1
LN69
Infrared Light Emitting Diodes
IF — Ta
I
FP — Duty cycle
IF — VF
60
50
40
30
20
10
10 2
10
80
tw = 10µs
Ta = 25˚C
Ta = 25˚C
70
60
50
40
30
20
10
0
1
10 –1
0
– 25
10 –2
10 –1
0
20
40
60
80
100
1
10
10 2
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆Ie — IFP
VF — Ta
∆Ie — Ta
10 2
10
1.6
1.2
0.8
0.4
0
10 3
(1) tw = 10µs
f = 100Hz
(2) DC
IF = 50mA
Ta = 25˚C
IF = 50mA
(1)
10mA
1mA
1
10 2
(2)
10 –1
10 –2
10 –3
10
10 –2
10 –1
1
– 40
0
40
80
120
– 20
0
20
40
60
80
Pulse forward current IFP (A)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
Spectral characteristics
Directivity characteristics
0˚
100
10˚
20˚
1000
980
960
940
920
100
80
60
40
20
0
I
F = 50mA
IF = 50mA
Ta = 25˚C
90
80
30˚
40˚
70
60
50
40
30
20
50˚
60˚
70˚
80˚
90˚
900
– 40
0
40
80
120
860 900 940 980 1020 1060 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
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