DSA2G01B0L [PANASONIC]

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN;
DSA2G01B0L
型号: DSA2G01B0L
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

放大器 光电二极管 晶体管
文件: 总4页 (文件大小:770K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSA2G01  
Silicon PNP epitaxial planar type  
Unit: mm  
For high-frequency amplification  
Features  
High transition frequency fT  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: A4  
Packaging  
DSA2G01×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–30  
Unit  
V
1: Base  
2: Emitter  
3: Collector  
Panasonic  
JEITA  
–20  
V
Mini3-G3-B  
–5  
V
SC-59A  
–30  
mA  
mW  
°C  
°C  
°C  
Code  
TO-236AA/SOT-23  
Collector power dissipation  
Junction temperature  
PC  
200  
Tj  
150  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
T
stg  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Base-emitter voltage  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
VBE  
ICBO  
ICEO  
IEBO  
hFE  
VCE = –10 V, IC = –1 mA  
VCB = –10 V, IE = 0  
– 0.7  
V
µA  
µA  
µA  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
– 0.1  
–100  
–10  
VCE = –20 V, IB = 0  
VEB = –5 V, IC = 0  
1
Forward current transfer ratio *  
VCE = –10 V, IC = –1 mA  
70  
220  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –10 mA, IB = –1 mA  
– 0.1  
300  
V
fT  
VCE = –10 V, IC = –1 mA  
150  
MHz  
Reverse transfer capacitance  
(Common emitter)  
Cre  
VCE = –10 V, IC = –1 mA, f = 10.7 MHz  
1.0  
pF  
Noise figure  
NF  
Zrb  
VCE = –10 V, IC = –1 mA, f = 5 MHz  
VCE = –10 V, IC = –1 mA, f = 2 MHz  
2.8  
22  
dB  
Reverse transfer impedance  
W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Rank classification  
*
Code  
Rank  
B
B
C
C
0
No-rank  
70 to 220  
A4  
hFE  
70 to 140  
A4B  
110 to 220  
A4C  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: February 2014  
Ver. CED  
1
DSA2G01  
PC T  
IC VCE  
hFE IC  
a
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
250  
200  
V
CE = −10 V  
Ta = 25°C  
Ta = 85°C  
I
B = −500 µA 450 µA  
400 µA  
350 µA  
150  
100  
300 µA  
250 µA  
200 µA  
150 µA  
100 µA  
25°C  
40°C  
50  
50 µA  
0
0
0
102  
0
2  
4  
6  
8 10 12  
1  
10  
40  
80  
120  
160  
200  
(
)
Ambient temperature Ta °C  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
VCE(sat) IC  
IC VBE  
Cob VCB  
10  
1  
25  
20  
15  
10  
5
40  
IC / IB = 10  
IE = 0  
V
CE = −10 V  
f =1 MHz  
Ta = 25°C  
25°C  
30  
20  
10  
Ta = 85°C  
40°C  
Ta = 85°C  
101  
40°C  
25°C  
1  
102  
101  
0
0
10  
−102  
0
0.4  
0.8  
1.2  
1
10  
102  
Base-emitter voltage VBE (V)  
Collector current IC (mA)  
Collector-base voltage VCB (V)  
fT IC  
350  
300  
250  
200  
150  
100  
VCE = 10 V  
a = 25°C  
T
50  
0
1
10−  
1  
10  
102  
Collector current IC (mA)  
Ver. CED  
2
DSA2G01  
Unit: mm  
Mini3-G3-B  
Land Pattern (Reference) (Unit: mm)  
Ver. CED  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the products described in this book for any special application, unless our company agrees to your using the products in  
this book for any special application.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.  
20100202  

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