DSA2I100SB [IXYS]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN;
| 型号： | DSA2I100SB |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN 光电二极管 |
| 文件： | 总2页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSA 2 I 100 SB
advanced
VRRM
IFAV
=
=
100 V
2 A
Schottky
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
VF = 0.65 V
(Marking on product)
Part number
DSA 2 I 100 SB
(S2KAB)
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
SMB (DO-214AA)
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
● Decoupling diode
● Low noise switching
● Low losses
R a t i n g s
Unit
Symbol
VRRM
Definition
Conditions
min.
typ.
max.
max. repetitive reverse voltage
=
=
25 °C
25 °C
100
V
TVJ
reverse current
forward voltage
IR
VR = 100 V
VR = 100 V
0.01
5
TVJ
TVJ
mA
mA
= 125 °C
IF
IF
=
=
2 A
4 A
0.79
0.87
VF
V
V
TVJ
TVJ
=
=
25°C
IF
IF
=
=
2 A
4 A
0.65
0.75
V
V
125
°C
average forward current
threshold voltage
IFAV
rectangular, d = 0.5
TL = 125 °C
TL = 175 °C
2
A
V
V
F0
for power loss calculation only
slope resistance
r F
m
Ω
thermal resistance junction to lead*
virtual junction temperature
total power dissipation
RthJL
TVJ
25
175
6
K/W
°C
-55
Ptot
=
25 °C
W
TL
max. forward surge current
junction capacitance
IFSM
CJ
tp = 10 ms (50 Hz), sine
VR = 5V; f = 1 MHz
TVJ
TVJ
TVJ
=
=
=
45 °C
25°C
25 °C
75
85
A
pF
mJ
A
non-repetitive avalanche energy
repetitive avalanche current
EAS
IAR
IAS
=
A; L = 100 µH
f = 10 kHz
tbd
tbd
V = 1.5·V typ.;
R
A
* mounted on 1 inch square PCB
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747 and per diode unless otherwise specified
© 2006 IXYS all rights reserved
DSA 2 I 100 SB
advanced
Ratings
Symbol
Definition
Conditions
min.
typ.
max.
Unit
A
RMS current
IRMS
per pin*
thermal resistance junction to ambient
RthJA
MD
70
K/W
mounting torque
Nm
N
mounting force with clip
F C
storage temperature
Tstg
-55
150
°C
g
Weight
0.1
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines
SMB (DO-214AA)
Millimeters
min
Inches
Dim.
E
max
4.57
3.94
2.20
2.44
5.59
1.52
0.31
2.20
min
max
A
B
C
D
E
F
4.06
3.30
1.95
2.13
5.21
0.76
0.15
2.00
0.160
0.130
0.077
0.084
0.205
0.030
0.006
0.079
0.180
0.155
0.087
0.096
0.220
0.060
0.012
0.087
F
G
G
H
A
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747 and per diode unless otherwise specified
© 2006 IXYS all rights reserved
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