DSA300I100NA [IXYS]

Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4;
DSA300I100NA
型号: DSA300I100NA
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4

软恢复二极管 局域网
文件: 总5页 (文件大小:561K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSA300I100NA  
=
=
=
VRRM  
IFAV  
VF  
100V  
300A  
0.88V  
Schottky Diode  
High Performance Schottky Diode  
Low Loss and Soft Recovery  
Single Diode  
Part number  
DSA300I100NA  
Backside: Isolated  
2
3
1
4
SOT-227B (minibloc)  
Features / Advantages:  
Applications:  
Package:  
Very low Vf  
Extremely low switching losses  
Low Irm values  
Improved thermal behaviour  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Free wheeling diode in low voltage  
converters  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Base plate: Copper  
internally DCB isolated  
Advanced power cycling  
V~  
3000  
Low noise switching  
Terms and Conditions of Usage  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and  
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The  
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns  
the specific application of your product, please contact your local sales office.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.  
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171127b  
© 2017 IXYS all rights reserved  
DSA300I100NA  
Ratings  
Schottky  
Symbol  
VRSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
100  
100  
3
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current, drain current  
VR = 100 V  
mA  
VR = 100 V  
IF = 300 A  
IF = 600 A  
IF = 300 A  
IF = 600 A  
TC = 95°C  
rectangular  
30 mA  
forward voltage drop  
0.99  
V
V
V
V
A
VF  
1.30  
0.88  
1.21  
300  
TVJ  
=
°C  
125  
average forward current  
threshold voltage  
TVJ = 150°C  
TVJ = 150°C  
IFAV  
d = 0.5  
0.53  
V
VF0  
for power loss calculation only  
slope resistance  
1.09 m  
0.15 K/W  
K/W  
rF  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
IFSM  
CJ  
0.10  
4.86  
TC = 25°C  
TVJ = 45°C  
TVJ = 25°C  
830  
W
kA  
nF  
total power dissipation  
max. forward surge current  
junction capacitance  
t = 10 ms; (50 Hz), sine; VR = 0 V  
VR = 12V f = 1 MHz  
4.80  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171127b  
© 2017 IXYS all rights reserved  
DSA300I100NA  
Ratings  
Package SOT-227B (minibloc)  
Symbol  
IRMS  
Definition  
Conditions  
min. typ. max. Unit  
1)  
per terminal  
150  
150  
125  
150  
A
°C  
°C  
°C  
g
RMS current  
-40  
-40  
-40  
TVJ  
virtual junction temperature  
Top  
operation temperature  
storage temperature  
Tstg  
30  
Weight  
1.1  
1.1  
1.5 Nm  
MD  
mounting torque  
terminal torque  
M
1.5 Nm  
T
terminal to terminal  
terminal to backside  
10.5  
8.6  
3.2  
mm  
mm  
V
dSpp/App  
dSpb/Apb  
creepage distance on surface | striking distance through air  
6.8  
t = 1 second  
3000  
2500  
V
isolation voltage  
ISOL  
50/60 Hz, RMS; IISOL 1 mA  
t = 1 minute  
V
1)  
IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product  
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.  
Part description  
Product Marking  
D = Diode  
Part No.  
S = Schottky Diode  
A = low VF  
Logo  
XXXXX  
®
300 = Current Rating [A]  
I = Single Diode  
Zyyww  
abcd  
100 = Reverse Voltage [V]  
NA = SOT-227B (minibloc)  
Assembly Line  
DateCode  
Assembly Code  
Ordering  
Ordering Number  
Marking on Product  
Delivery Mode  
Tube  
Quantity Code No.  
10 509813  
Standard  
DSA300I100NA  
DSA300I100NA  
Similar Part  
DSA300I45NA  
Package  
Voltage class  
SOT-227B (minibloc)  
SOT-227B (minibloc)  
45  
DSA300I200NA  
200  
TVJ = 150°C  
Equivalent Circuits for Simulation  
* on die level  
Schottky  
V0  
I
R0  
threshold voltage  
slope resistance *  
0.53  
0.25  
V
V0 max  
R0 max  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171127b  
© 2017 IXYS all rights reserved  
DSA300I100NA  
Outlines SOT-227B (minibloc)  
2
3
1
4
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171127b  
© 2017 IXYS all rights reserved  
DSA300I100NA  
Schottky  
600  
100  
10  
1
16000  
14000  
12000  
10000  
8000  
TVJ=150°C  
500  
125°C  
100°C  
400  
IF  
IR  
CT  
TVJ= 25°C  
75°C  
50°C  
300  
0.1  
[mA]  
0.01  
[A]  
200  
TVJ  
=
[pF]  
6000  
4000  
2000  
0
25°C  
125°C  
150°C  
100  
0.001  
25°C  
0
0.0  
0.0001  
0.4  
0.8  
1.2  
20  
40  
60  
80  
100  
0
50  
100  
VF [V]  
VR [V]  
VR [V]  
Fig. 1 Max. forward voltage  
drop characteristics  
Fig. 2 Typ. reverse current  
IR vs. reverse voltage VR  
Fig. 3 Typ. junction capacitance  
CT vs. reverse voltage VR  
350  
250  
200  
150  
dc =  
1
0.5  
0.4  
0.33  
0.17  
0.08  
RthHA  
300  
250  
200  
150  
100  
50  
0.2  
0.4  
0.6  
0.8  
1.0  
2.0  
dc =  
1
0.5  
0.4  
0.33  
0.17  
IF(AV)  
P(AV)  
100  
[W]  
[A]  
50  
0
0
0
40  
80  
120  
160  
0
50 100 150 200 250  
IF(AV) [A]  
0
40  
80  
Tamb [°C]  
120  
160  
TC [°C]  
Fig. 5 Average forward current  
IF(AV) vs. case temp. TC  
Fig. 4a Power dissipation versus direct output current  
Fig. 4b and ambient temperature  
0.16  
0.12  
Rthi [K/W] ti [s]  
ZthJC  
0.017  
0.013  
0.02  
0.01  
0.00001  
0.01  
0.08  
[K/W]  
0.04  
0.05  
0.045  
0.3  
0.05  
0.00  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20171127b  
© 2017 IXYS all rights reserved  

相关型号:

DSA300I200NA

Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-2
IXYS

DSA30C100HB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3
LITTELFUSE

DSA30C100HB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3
IXYS

DSA30C100PB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
LITTELFUSE

DSA30C100PN

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FPAB, 3 PIN
IXYS

DSA30C100QB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 100V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-3P, 3 PIN
IXYS

DSA30C150HB

Schottky Diode Gen 2 High Performance Schottky Diode Low Loss and Soft Recovery
IXYS

DSA30C150PB

Schottky Diode Gen 2 High Performance Schottky Diode Low Loss and Soft Recovery
IXYS

DSA30C200IB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 200V V(RRM), Silicon, TO-262AA, I2PAK-3
LITTELFUSE

DSA30C200PB

High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode
IXYS

DSA30C45HB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-247AD, ROHS COMPLIANT, PLASTIC PACKAGE-3
IXYS

DSA30C45PB

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
IXYS