DSA300I100NA [IXYS]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4;
| 型号： | DSA300I100NA |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 300A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIBLOC-4 软恢复二极管 局域网 |
| 文件： | 总5页 (文件大小：561K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSA300I100NA
=
=
=
VRRM
IFAV
VF
100V
300A
0.88V
Schottky Diode
High Performance Schottky Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSA300I100NA
Backside: Isolated
2
3
1
4
SOT-227B (minibloc)
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
V~
3000
● Low noise switching
Terms and Conditions of Usage
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20171127b
© 2017 IXYS all rights reserved
DSA300I100NA
Ratings
Schottky
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
100
100
3
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current, drain current
VR = 100 V
mA
VR = 100 V
IF = 300 A
IF = 600 A
IF = 300 A
IF = 600 A
TC = 95°C
rectangular
30 mA
forward voltage drop
0.99
V
V
V
V
A
VF
1.30
0.88
1.21
300
TVJ
=
°C
125
average forward current
threshold voltage
TVJ = 150°C
TVJ = 150°C
IFAV
d = 0.5
0.53
V
VF0
for power loss calculation only
slope resistance
1.09 mΩ
0.15 K/W
K/W
rF
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
IFSM
CJ
0.10
4.86
TC = 25°C
TVJ = 45°C
TVJ = 25°C
830
W
kA
nF
total power dissipation
max. forward surge current
junction capacitance
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 12V f = 1 MHz
4.80
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20171127b
© 2017 IXYS all rights reserved
DSA300I100NA
Ratings
Package SOT-227B (minibloc)
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
1)
per terminal
150
150
125
150
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
30
Weight
1.1
1.1
1.5 Nm
MD
mounting torque
terminal torque
M
1.5 Nm
T
terminal to terminal
terminal to backside
10.5
8.6
3.2
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
6.8
t = 1 second
3000
2500
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
1)
IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Part description
Product Marking
D = Diode
Part No.
S = Schottky Diode
A = low VF
Logo
XXXXX
®
300 = Current Rating [A]
I = Single Diode
Zyyww
abcd
100 = Reverse Voltage [V]
NA = SOT-227B (minibloc)
Assembly Line
DateCode
Assembly Code
Ordering
Ordering Number
Marking on Product
Delivery Mode
Tube
Quantity Code No.
10 509813
Standard
DSA300I100NA
DSA300I100NA
Similar Part
DSA300I45NA
Package
Voltage class
SOT-227B (minibloc)
SOT-227B (minibloc)
45
DSA300I200NA
200
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Schottky
V0
I
R0
threshold voltage
slope resistance *
0.53
0.25
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20171127b
© 2017 IXYS all rights reserved
DSA300I100NA
Outlines SOT-227B (minibloc)
2
3
1
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20171127b
© 2017 IXYS all rights reserved
DSA300I100NA
Schottky
600
100
10
1
16000
14000
12000
10000
8000
TVJ=150°C
500
125°C
100°C
400
IF
IR
CT
TVJ= 25°C
75°C
50°C
300
0.1
[mA]
0.01
[A]
200
TVJ
=
[pF]
6000
4000
2000
0
25°C
125°C
150°C
100
0.001
25°C
0
0.0
0.0001
0.4
0.8
1.2
20
40
60
80
100
0
50
100
VF [V]
VR [V]
VR [V]
Fig. 1 Max. forward voltage
drop characteristics
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
350
250
200
150
dc =
1
0.5
0.4
0.33
0.17
0.08
RthHA
300
250
200
150
100
50
0.2
0.4
0.6
0.8
1.0
2.0
dc =
1
0.5
0.4
0.33
0.17
IF(AV)
P(AV)
100
[W]
[A]
50
0
0
0
40
80
120
160
0
50 100 150 200 250
IF(AV) [A]
0
40
80
Tamb [°C]
120
160
TC [°C]
Fig. 5 Average forward current
IF(AV) vs. case temp. TC
Fig. 4a Power dissipation versus direct output current
Fig. 4b and ambient temperature
0.16
0.12
Rthi [K/W] ti [s]
ZthJC
0.017
0.013
0.02
0.01
0.00001
0.01
0.08
[K/W]
0.04
0.05
0.045
0.3
0.05
0.00
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20171127b
© 2017 IXYS all rights reserved
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