DB2X41100L [PANASONIC]
For rectification DB2J411 in Mini2 type package; 对于MINI2型包整改DB2J411
| 型号： | DB2X41100L |
| 厂家： | 
PANASONIC |
| 描述： | For rectification DB2J411 in Mini2 type package |
| 文件： | 总5页 (文件大小：318K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Doc No. TT4-EA-13670
Revision. 3
Schottky Barrier Diode
DB2X41100L
DB2X41100L
Silicon epitaxial planar type
Unit: mm
For rectification
DB2J411 in Mini2 type package
1.6
0.13
2
Features
Low forward voltage and low reverse leakage current
Short reverse recovery time trr
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
Packaging
4R
1
0.55
0.8
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
Panasonic
JEITA
Mini2-F4-B
SC-109D
SOD-123
Code
Absolute Maximum Ratings Ta = 25 C
Parameter
Reverse voltage
Forward current (average) *1
Symbol
VR
IF(AV)
IFSM
Tj
Rating
40
1
7
150
Unit
V
A
Internal Connection
2
*2
A
Non-repetitive peak forward surge current
*1
°C
°C
°C
Junction temperature
Operating ambient temperature
Storage temperature
Topr
Tstg
-40 to +85
-55 to +150
Note: *1 Tl = 80 °C
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1
Page 1 of 4
Established : 2011-06-30
Revised : 2013-04-24
Doc No. TT4-EA-13670
Revision. 3
Schottky Barrier Diode
DB2X41100L
Electrical Characteristics Ta = 25 C 3 C
Parameter
Forward voltage
Symbol
Conditions
Min Typ Max
0.50 0.58
Unit
V
μA
pF
ns
VF
IR
Ct
trr
IF = 1 A
VR = 40 V
Reverse current
15
21
100
Terminal capacitance
VR = 10 V, f = 1 MHz
IF = IR = 100 mA, Irr = 0.1 × IR
Reverse recovery time *1
6.8
Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Input Pulse
Output Pulse
trr
Bias Application Unit (N-50BU)
tp
tr
t
10%
IF
t
A
90%
VR
Irr = 0.1 × IR
IF = 100 mA
IR = 100 mA
tp = 2 μs
tr = 0.35 ns
δ = 0.05
Pulse Generator
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
(PG-10N)
Rs = 50 Ω
Page 2 of 4
Established : 2011-06-30
Revised
: 2013-04-24
Doc No. TT4-EA-13670
Revision. 3
Schottky Barrier Diode
DB2X41100L
Technical Data ( reference )
IR - VR
IF - VF
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
85 °C
Ta = 125 °C
Ta = 125 °C
85 °C
25 °C
25 °C
-40 °C
1.E-06
1.E-07
1.E-08
-40 °C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
1000
1.2
Forward voltage VF (V)
Reverse voltage VR (V)
Rth - t
Ct - VR
1000
100
10
140
120
100
80
(1)
(2)
Ta = 25 °C
f = 1 MHz
(3)
Rth(j-l) = 40 °C/W
60
(1) Non-heat sink
40
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
20
0
1
0
5
10
15
20
25
30
35
40
0.001 0.01
0.1
1
10
100
Reverse voltage VR (V)
Time t (s)
IF(AV) - Tl
PF(AV) - IF(AV)
0.6
0.5
0.4
0.3
0.2
0.1
0
1.25
1
IF
tp/T
IF
tp
tp
DC
Sine Wave
1/2
T
T
DC
1/2
VR = 20 V
Tj = 125 °C
1/4
0.75
0.5
0.25
0
1/4
Sine Wave
0
25
50
75
100 125 150 175
0
0.2
0.4
0.6
0.8
1
Lead temperature Tl (°C)
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2011-06-30
Revised : 2013-04-24
Doc No. TT4-EA-13670
Revision. 3
Schottky Barrier Diode
DB2X41100L
Mini2-F4-B
Unit: mm
1.6±0.1
2
0.13+-0.052
1
0.55±0.10
(7°)
Land Pattern (Reference) (Unit: mm)
1.1
Page 4 of 4
Established : 2011-06-30
Revised : 2013-04-24
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