DB2X41500L [PANASONIC]
Silicon epitaxial planar type For frequency rectification; 硅外延平面型对于频率整改
| 型号： | DB2X41500L |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type For frequency rectification |
| 文件： | 总5页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Doc No. TT4-EA-13620
Revision. 3
Schottky Barrier Diode
DB2X41500L
DB2X41500L
Silicon epitaxial planar type
Unit: mm
For frequency rectification
1.6
0.13
2
Features
Low forward voltage VF
Forward current (Average) IF(AV) = 3 A rectification is possible
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
Packaging
AD
1
0.55
0.8
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Cathode
2. Anode
Panasonic
JEITA
Mini2-F4-B
SC-109D
SOD-123
Code
Absolute Maximum Ratings Ta = 25 C
Parameter
Reverse voltage
Forward current (Average) *1
Symbol
VR
IF(AV)
Rating
40
Unit
V
A
A
A
Internal Connection
3.0
2
50 *2
Non-repetitive peak forward surge current
IFSM
15 *3
Junction temperature
Operating ambient temperature
Storage temperature
Tj
Topr
Tstg
125
-40 to +85
-55 to +125
°C
°C
°C
Note: *1 Tl = 60 °C / DC
1
*2 Rectangle wave 1 cycle (Pulse width = 50 μs, non-repetitive peak current)
*3 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page 1 of 4
Established : 2010-02-26
Revised : 2013-04-24
Doc No. TT4-EA-13620
Revision. 3
Schottky Barrier Diode
DB2X41500L
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Conditions
Min Typ Max
0.35 0.44
Unit
V
VF1
VF2
IR
IF = 1.0 A
IF = 3.0 A
VR = 40V
Forward voltage
0.47 0.55
Reverse current
40
70
200
μA
pF
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
IF = IR = 100 mA
Irr = 10 mA, RL = 100
Reverse recovery time *1
trr
25
ns
Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Input Pulse
Output Pulse
Bias Application Unit (N-50BU)
tp
tr
t
10%
trr
IF
t
A
90%
VR
I
rr = 10 mA
tp = 2 μs
tr = 0.35 ns
δ = 0.05
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Pulse Generator
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
(PG-10N)
Rs = 50 Ω
Page 2 of 4
Established : 2010-02-26
Revised
: 2013-04-24
Doc No. TT4-EA-13620
Revision. 3
Schottky Barrier Diode
DB2X41500L
Technical Data ( reference )
IR - VR
IF - VF
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
Ta = 125 °C
85 °C
Ta = 125 °C
85 °C
25 °C
25 °C
1.E-06
1.E-07
1.E-08
-40 °C
-40 °C
0.3
0.0
0.1
0.2
0.4
0.5
0.6
0
10
20
30
40
Forward voltage VF (V)
Reverse voltage VR (V)
Rth - t
Ct - VR
1000
100
10
400
350
300
250
200
150
100
50
(1)
(2)
Ta = 25 °C
f = 1 MHz
(3)
Rth(j-l) = 30 °C/W
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
0
1
0
5
10
15
20
25
30
35
40
0.001 0.01
0.1
1
10
100
1000
Reverse voltage VR (V)
Time t (s)
IF(AV) - Tl
PF(AV) - IF(AV)
2
1.5
1
3.5
3
tp/T
IF
IF
tp
tp
T
DC
1/2
DC
T
2.5
2
Sine Wave
VR = 20 V
Tj = 125 °C
1/2
1/4
1.5
1
1/4
Sine Wave
0.5
0
0.5
0
0
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
3.5
Lead temperature Tl (°C)
Forward current (Average) IF(AV) (A)
Page 3 of 4
Established : 2010-02-26
Revised : 2013-04-24
Doc No. TT4-EA-13620
Revision. 3
Schottky Barrier Diode
DB2X41500L
Mini2-F4-B
Unit: mm
1.6±0.1
2
0.13+-0.052
1
0.55±0.10
(7°)
Land Pattern (Reference) (Unit: mm)
1.1
Page 4 of 4
Established : 2010-02-26
Revised : 2013-04-24
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