DB3 [TSC]
150mW Bi-directional Trigger Diode; 为150mW双向触发二极管
| 型号： | DB3 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 150mW Bi-directional Trigger Diode |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DB3-DB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
DO-35 Axial Lead
HERMETICALLY SEALED GLASS
D
Features
C
Designed for through-Hole Device Type Mounting.
A
Hermetically Sealed Glass.
All external suface are corrosion resistant and
terminals are readily solderable.
B
High reliability glass passivation insuring parameter
stability and protection against junction contamination.
Pb free version and RoHS compliant
Unit (mm)
Min Max
Unit (inch)
Min Max
Dimensions
Mechanical Data
A
B
C
D
Case :DO-35 Solder Hot Dip Tin (Sn) lead finish
0.45 0.55 0.018 0.022
3.05 5.08 0.120 0.200
25.4 38.1 1.000 1.500
1.53 2.28 0.060 0.090
Terminal: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Marking : DB3/DB3TG
Weight : 0.1255 gram (approximately)
Ordering Information
Part No.
Packing
Package
DO-35
DB3/DB3TG RI
5Kpcs / 10" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
Value
150
Units
Power Dissipation
PD
mW
Pulse Width=
Repetitive Peak Forward Current
IFRM
2
A
20μsec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
400
°C/W
°C
TJ, TSTG
-40 to + 125
Electrical Characteristics
Type Number
Symbol
VBO
DB3
DB3TG
32
Units
V
32
Break-over Voltage
C=
C=
C=
VR=
22nF
22nF
22nF
0.5V
+ / -VBO
IBO
+ / - 3
100
+ / - 2
15
V
Break-over Voltage Symmetry
Break-over Current
nA
μA
nF
V
Maxiumn Leakage Current
Junction Capacitance
Output Voltage
IR
10
22.0
5
CJ
VR=0, f=1.0MHz
VO
Trr
1.5
μs
Reverse Recovery Time
(Note2)
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IF=0.5A, RL=100Ω
Version : C09
DB3-DB3TG
150mW Bi-directional Trigger Diode
Small Signal Diode
Rating and Sharacteristic Curves
ΔVF
IF=10m
I(BO)F
VBO
IBO
VF
IB
:Break-Over Voltage at IBO
: Test current for voltage VBO
: Dynamic impedance at IF
: Test current for voltage VB
: Voltage at current IB
VBO
V
IB
VB VF
I(BO)R
VBO
IR=10m
Δ
VB
IB
: Test current for voltage VB
FIG 2 Typical Junction Capacitance
FIG 1 Admissible Power Dissipation Curve
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
160
120
80
40
0
25
50
75
100
125
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature (oC)
Reverse Voltage (V)
FIG 3 Peak pulse current versus duration
10
1
0.1
0.01
10
100
1000
10000
Trr (μs)
Version : C09
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