DB3 [STMICROELECTRONICS]
TRIGGER DIODES; 触发二极管
| 型号： | DB3 |
| 厂家： | 
ST |
| 描述： | TRIGGER DIODES |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DB3 /DB4 / DC34
TRIGGER DIODES
FEATURES
V
BO : 32V / 34V / 40V VERSIONS
LOW BREAKOVER CURRENT
DESCRIPTION
DO 35
(Glass)
High reliability glass passivation insuring
parameter stability and protection against
junction contamination.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
P
Power dissipation on printed circuit
(L = 10 mm)
Ta = 65 °C
150
mW
ITRM
Repetitive peak on-state current
tp = 20 µs
F= 100 Hz
2
A
Storage and operating junction temperature range
Tstg
Tj
- 40 to + 125
- 40 to + 125
°C
°C
THERMAL RESISTANCES
Symbol
Parameter
Value
400
Unit
°C/W
°C/W
Rth (j-a)
Rth (j-l)
Junction to ambient
Junction-leads
150
1/4
April 1995
DB3 / DB4 / DC34
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test Conditions
Value
Unit
DB3 DC34 DB4
VBO
Breakover voltage *
C = 22nF **
see diagram 1
MIN
TYP
MAX
28
32
36
30
34
38
35
40
45
V
[I+VBOI-I-VBOI] Breakover voltage
symmetry
C = 22nF **
see diagram 1
MAX
± 3
V
V
I∆V± I
Dynamic breakover
voltage *
∆I = [IBO to IF=10mA] MIN
5
see diagram 1
VO
IBO
Output voltage *
see diagram 2
C = 22nF **
MIN
5
V
Breakover current *
MAX 100
50
100
µA
tr
Rise time *
see diagram 3
TYP
1.5
10
µs
IB
Leakage current *
VB = 0.5 VBO max
see diagram 1
MAX
µA
* Electrical characteristic applicable in both forward and reverse directions.
** Connected in parallel with the devices.
DIAGRAM 1 : Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
10 k
500 k
D.U.T
VO
220 V
50 Hz
R = 20
+ I
F
0.1
F
10mA
I
BO
DIAGRAM 3 : Test circuit see diagram 2.
I
- V
+ V
B
Adjust R for lp=0.5A
0,5 V
BO
V
lp
V
90 %
BO
- I
F
10 %
t
r
2/4
DB3 / DB4 / DC34
Fig.1 : Power dissipation versus ambient tempera-
ture (maximum values)
Fig.2 : Relative variation of VBO versus junction
temperature(typical values)
VBO[Tj]
P (mW)
160
VBO[Tj=25oC]
1.08
140
120
100
80
1.06
1.04
60
40
1.02
Tj(oC)
o
20
o
Tamb ( C)
1.00
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
25
50
75
100
125
Fig.3 : Peak pulse current versus pulse duration
(maximum values)
I
(A)
TRM
F = 100 Hz
Tj initial = 25
2
1
o
C
0.1
tp ( s)
0.01
10
100
1000
10000
3/4
DB3 / DB4 / DC34
PACKAGE MECHANICAL DATA (in millimeters)
DO 35 Glass
B
A
B
O/ C
note 1
note 1
E
E
/
O
O/ D
D
note 2
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
NOTES
A
B
C
D
E
3.050
4.500
0.120
0.500
0.060
0.018
0.117
1 - The lead diameter D is not controlled over zone E
12.7
2 - The minimum axial lengh within which the device may be
placed with its leads bent at right angles is 0.59”(15 mm)
1.530
0.458
2.000
0.558
1.27
0.079
0.022
0.050
Cooling method by convection and conduction
Marking : type number
Weight : 0.15 g
Polarity : N A
Stud torque : N A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All rights reserved.
Purchase of I2C Components by SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in an I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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