2SK3268 [PANASONIC]

Silicon N-channel power MOSFET; 硅N沟道功率MOSFET
2SK3268
型号: 2SK3268
厂家: PANASONIC    PANASONIC
描述:

Silicon N-channel power MOSFET
硅N沟道功率MOSFET

晶体 小信号场效应晶体管 开关
文件: 总2页 (文件大小:61K)
中文:  中文翻译
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Power MOSFETs  
2SK3268  
Silicon N-channel power MOSFET  
Unit: mm  
Features  
6.5 0.1  
5.3 0.1  
4.35 0.1  
2.3 0.1  
Avalanche energy capability guaranteed  
High-speed switching  
0.5 0.1  
Low ON resistance Ron  
No secondary breakdown  
Low-voltage drive  
High electrostatic energy capability  
1.0 0.1  
0.1 0.05  
0.5 0.1  
Applications  
0.75 0.1  
2.3 0.1  
Non-contact relay  
(5.3)  
(4.35)  
(3.0)  
4.6 0.1  
Solenoid drive  
Motor drive  
Control equipment  
Switching mode regulator  
1
2
3
Absolute Maximum Ratings TC = 25°C  
1: Gate  
2: Drain  
3: Source  
Parameter  
Drain-source surrender voltage  
Gate-source surrender voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
100  
EIAJ: SC-63  
U-G1 Package  
20  
V
15  
A
Marking Symbol: K3268  
Peak drain current  
IDP  
60  
A
Avalanche energy capability *  
EAS  
PD  
22.5  
mJ  
W
Internal Connection  
Power dissipation  
20  
D
Ta = 25°C  
1
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
G
Tstg  
55 to +150  
Note) : L = 0.2 mH, I = 15 A, 1 pulse  
*
L
S
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Drain-source surrender voltage  
Drain-source cutoff current  
Gate-source cutoff current  
Gate threshold voltage  
Symbol  
VDSS  
IDSS  
Conditions  
Min  
Typ  
Max  
Unit  
V
ID = 1 mA, VGS = 0  
VDS = 80 V, VGS = 0  
VGS 20 V, VDS = 0  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 12 A  
100  
10  
1
µA  
µA  
V
IGSS  
=
Vth  
2.0  
6
4.0  
Forward transfer admittance  
Drain-source ON resistance  
Diode forward voltage  
Yfs  
11  
70  
S
RDS(on) VGS = 10 V, ID = 12 A  
VDF  
100  
mΩ  
V
IDR = 15 A, VGS = 0  
1.4  
Ciss  
VDS = 10 V, VGS = 0, f = 1 MHz  
960  
285  
85  
pF  
Short-circuit forward transfer capacitance  
(Common source)  
Coss  
Crss  
pF  
pF  
Short-circuit output capacitance  
(Common source)  
Reverse transfer capacitance  
(Common source)  
Turn-on delay time  
Rise time  
td(on)  
tr  
VDD = 30 V, ID = 12 A, RL = 2.5 Ω  
VGS = 10 V  
15  
10  
35  
65  
ns  
ns  
Fall time  
tf  
ns  
Turn-off delay time  
Thermal resistance (ch-c)  
Thermal resistance (ch-a)  
td(off)  
Rth(ch-c)  
Rth(ch-a)  
ns  
6.25  
125  
°C/W  
°C/W  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2004  
SJG00031AED  
1
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually  
exchanged.  
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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