2SK3270-01 [FUJI]
N-channel MOS-FET; N沟道MOS - FET的
| 型号： | 2SK3270-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-channel MOS-FET |
| 文件： | 总2页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
N-channel MOS-FET
2SK3270-01
6,5mW
±80A 135W
Trench Gate MOSFET
60V
> Features
> Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
> Applications
- Motor Control
- General Purpose Power Amplifier
DC-DC converters
-
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
V
60
V
A
DS
I
±80
±320
D
I
A
D(puls)
Gate-Source-Voltage
VGS
+30 / -20
613
V
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
E
mJ*
W
°C
°C
AV
P
135
D
T
150
ch
T
-55 ~ +150
* L=0,13mH, VCC=24V
stg
Electrical Characteristics (TC=25°C), unless otherwise specified
-
Item
Symbol
Test conditions
Min.
60
Typ.
Max.
Unit
V
ID=1mA
VGS=0V
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
BV
DSS
ID=10mA
VDS=60V
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
V
I
2,5
3,0
1,0
3,5
V
GS(th)
DSS
100,0
µA
µA
nA
mW
V
GS=0V
10,0 500,0
VGS=±30V
ID=40A
Gate Source Leakage Current
I
10
100
6,5
GSS
VGS=10V
Drain Source On-State Resistance
R
5,0
DS(on)
ID=40A
VDS=10V
Forward Transconductance
Input Capacitance
g
C
C
C
t
25
50
9000
1250
700
50
S
pF
pF
pF
ns
ns
ns
ns
A
fs
VDS=25V
iss
oss
rss
d(on)
r
VGS=0V
f=1MHz
VCC=30V
VGS=10V
ID=80A
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
t
200
150
135
Turn-Off-Time toff (ton=td(off)+tf)
t
d(off)
f
t
RGS=10 W
Tch=25°C
Avalanche Capability
I
L = 100µH
80
AV
SD
rr
IF=80A VGS=0V Tch=25°C
IF=50A VGS=0V
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
t
1,0
85
1,5
V
ns
µC
-dIF/dt=100A/µs Tch=25°C
Q
0,25
rr
-
Thermal Characteristics
Item
Symbol
Test conditions
channel to ambient
channel to case
Min.
Typ.
Max.
Unit
Thermal Resistance
R
75,0 °C/W
th(ch-a)
th(ch-c)
R
0,926 °C/W
N-channel MOS-FET
6,5mW
60V
±80A 135W
Trench Gate MOSFET
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
Typical Transfer Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
RDS(on) = f(Tch); ID=25A; VGS=10V
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
•
•
•
VDS [V]
Tch [°C]
VGS [V]
®
®
®
Typical Drain-Source On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
•
•
•
ID [A]
ID [A]
Tch [°C]
®
®
®
Typical Capacitances vs. VDS
Typical Gate Charge Characteristic
Forward Characteristics of Reverse Diode
C=f(VDS); VGS=0V; f=1MHz
VGS=f(Qg); ID=80A; Tch=25°C
IF=f(VSD); 80µs pulse test; Tch=25°C
•
•
•
•
VDS [V]
VSD [V]
®
Qg [nC] ®
®
Maximum Avalanche Energy vs. starting Tch
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25°C
•
EAV=f(starting Tch): VCC=24V; IAV £ 80A
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
•
•
starting Tch [°C]
VDS [V]
®
®
t [s] ®
This specification is subject to change without notice!
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