2SK3269 [PANASONIC]
N-channel enhancement mode MOSFET; N沟道增强型MOSFET
| 型号： | 2SK3269 |
| 厂家： | 
PANASONIC |
| 描述： | N-channel enhancement mode MOSFET |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power MOSFETs
2SK3269
N-channel enhancement mode MOSFET
■ Features
• Low on-resistance, low Qg
• High avalanche resistance
Unit: mm
4.6 0.2
10.5 0.3
1.4 0.1
■ Applications
• For PDP
• For high-speed switching
1.4 0.1
2.5 0.2
0.8 0.1
2.54 0.3
0 to 0.3
■ Absolute Maximum Ratings TC = 25°C
(10.2)
(8.9)
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Symbol
VDSS
VGSS
ID
Rating
Unit
V
1
2
3
100
20
25
V
A
1: Gate
2: Drain
3: Source
TO-220C-G1 Package
Peak drain current
IDP
100
A
Avalanche energy capability *
Power dissipation
EAS
PD
22.5
mJ
W
40
Marking Symbol: K3269
Internal Connection
Ta = 25°C
1.4
Channel temperature
Storage temperature
Tch
150
°C
°C
Tstg
−55 to +150
D
Note) : L = 0.2 mH, IL = 15 A, 1 pulse
*
G
S
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Drain-source surrender voltage
Gate threshold voltage
Symbol
VDSS
Vth
Conditions
Min
100
2.0
Typ
Max
Unit
V
ID = 1 mA, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 80 V, VGS = 0
4.0
10
1
V
Drain-source cutoff current
Gate-source cutoff current
Drain-source ON resistance
Forward transfer admittance
IDSS
µA
µA
mΩ
S
IGSS
VGS = 20 V, VDS = 0
RDS(on) VGS = 10 V, ID = 12 A
70
11
100
Yfs
VDS = 10 V, ID = 12 A
6
Short-circuit forward transfer capacitance
(Common-source)
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
960
pF
Short-circuit output capacitance
(Common-source)
Coss
Crss
285
85
pF
pF
Reverse transfer capacitance
(Common-source)
Turn-on delay time
Rise time
td(on)
Tr
td(off)
tf
VDD = 30 V, ID = 12 A
RL = 2.5 Ω, VGS = 10 V
15
10
65
35
ns
ns
ns
ns
Turn-off delay time
Fall time
Publication date: March 2004
SJG00032AED
1
2SK3269
■ Electrical Characteristics (continued) TC = 25°C 3°C
Parameter
Diode foward voltage
Symbol
VDSF
Conditions
IDR = 15 A, VGS = 0
Min
Typ
Max
1.4
Unit
V
Thermal resistance (ch-c)
Thermal resistance (ch-a)
Rth(ch-c)
Rth(ch-a)
3.125
89.3
°C/W
°C/W
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Safe operation area
PD Ta
1 000
100
10
60
50
40
Non repetitive pulse
(1) TC = Ta
TC = 25°C
(2) Without heat sink:
PD = 1.4 W
IDP
t
= 100 µs
t =
1 ms
ID
(1)
30
20
t =
10 ms
t =
100 ms
RDS(on) / RDS(on)
Limited
1
DC
10
0
(2)
10−1
0.1
1
10
100
0
25
50
75
100 125 150
(
)
Ambient temperature Ta °C
(
)
V
Drain-source voltage VDS
SJG00032AED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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