2SK3269 [KEXIN]
N-Channel Enhacement Mode MOSFET; N沟道Enhacement模式MOSFET
| 型号： | 2SK3269 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | N-Channel Enhacement Mode MOSFET |
| 文件： | 总1页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
N-Channel Enhacement Mode MOSFET
2SK3269
TO-263
Unit: mm
+0.2
-0.2
Features
4.57
+0.1
1.27
-0.1
4.5 V drive available
Low on-state resistance
RDS(on)1 = 12 m MAX. (VGS = 10 V, ID = 18 A)
Low gate charge
+0.1
-0.1
0.1max
1.27
+0.1
0.81
-0.1
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
2.54
1 Gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 Drain
3 Source
Surface mount device available
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
Unit
V
100
Gate to source voltage
V
20
A
35
140
Drain current
Idp *
A
1.5
Power dissipation
Ta=25
Tc=25
PD
W
40
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to +150
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
IDSS
Testconditons
ID=1mA,VGS=0
Min
Typ
Max
Unit
V
Drain source surrender voltage
Drain cut-off current
100
VDS=20V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=12A
VGS=10V,ID=18A
VGS=4.5V,ID=18A
10
10
A
Gate leakage current
Gat cutoff voltage
IGSS
A
VGS(off)
1.0
9.0
2.5
V
Forward transfer admittance
S
Yfs
8.5
12
12
19
m
Drain to source on-state resistance
RDS(on)
m
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
ton
tr
1300
570
300
70
pF
pF
pF
ns
ns
ns
ns
VDS=10V,VGS=0,f=1MHZ
1220
100
180
ID=18A,VGS(on)=10V,RG=10
,VDD=10V
Turn-off delay time
Fall time
toff
tf
1
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