2SJ0163 [PANASONIC]
For General Switching; 对于一般的开关
| 型号： | 2SJ0163 |
| 厂家： | 
PANASONIC |
| 描述： | For General Switching |
| 文件： | 总3页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Junction FETs (Small Signal)
2SJ0163 (2SJ163)
Silicon P-Channel Junction FET
For general switching
Unit: mm
Complementary to 2SK1103
+0.10
–0.05
0.40
+0.10
–0.06
0.16
3
■ Features
■ Low ON-resistance
■ Low-noise characteristics
1
2
(0.95) (0.95)
1.9±0.1
+0.20
■ Absolute Maximum Ratings (Ta = 25°C)
2.90
–0.05
Parameter
Gate to Drain voltage
Drain current
Symbol
VGDS
ID
Ratings
65
Unit
V
10˚
−20
mA
mA
mW
°C
Gate current
IG
−10
Allowable power dissipation
Channel temperature
Storage temperature
PD
150
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Tch
150
Tstg
−55 to +150
°C
Marking Symbol (Example): 4M
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
VDS = −10 V, VGS = 0
min
typ
max
−6
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
IDSS
− 0.2
IGSS
VGS = 30 V, VDS = 0
10
VGDS
VGSC
| Yfs |
RDS(on)
IG = 10 µA, VDS = 0
65
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
VDS = −10 V, ID = −10 µA
VDS = −10 V, ID = −1 mA, f = 1 kHz
VDS = −10 mV, VGS = 0
1.5
2.5
300
12
3.5
V
1.8
mS
Ω
Input capacitance (Common Source) Ciss
pF
pF
VDS = −10 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance (Common Source) Crss
4
* IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
− 0.2 to −1 − 0.6 to −1.5
4MO 4MP
−1 to −3
4MQ
−2.5 to −6
4MR
Marking Symbol
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SJF00001BED
1
2SJ0163
PD
Ta
ID
VDS
ID VGS
200
175
150
125
100
75
−4.0
−3.5
−3.0
−2.5
−2.0
−1.5
−1.0
− 0.5
0
−3.0
−2.5
−2.0
−1.5
−1.0
− 0.5
0
VDS = −10 V
Ta = 25°C
VGS = 0 V
0.2 V
0.4 V
50
0.6 V
0.8 V
25
0
0
20 40 60 80 100 120 140 160
0
−2
−4
−6
−8
−10 −12
0
1
2
3
4
5
(
)
( )
V
( )
Gate to source voltage VGS V
Ambient temperature Ta °C
Drain to source voltage VDS
| Yfs | VGS
| Yfs | ID
Ciss, Coss, Crss
VDS
4.0
16
14
12
10
8
24
20
16
12
8
f = 1 MHz
VGS = 0
Ta = 25°C
VDS = −10 V
VDS = −10 V
f = 1 kHz
Ta = 25°C
3.5 f = 1 kHz
Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
Ciss
6
4
4
Coss
Crss
2
0
0
−1
2.0
1.5
1.0
0.5
0
0
−2
−4
−6
−8
−10 −12
−3
−10
−30
−100
( )
V
(
)
( )
Drain to source voltage VDS V
Gate to source voltage VGS
Drain current ID mA
SJF00001BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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(4) The products and product specifications described in this material are subject to change without
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, redundant design is recommended,
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A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR
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