2SJ0163P [PANASONIC]

Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, SC-59, MINI3-G1, 3 PIN;


型号：	2SJ0163P
厂家：	PANASONIC
描述：	Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, P-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, SC-59, MINI3-G1, 3 PIN 开关光电二极管晶体管
文件：	总3页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Silicon Junction FETs (Small Signal)

2SJ0163 (2SJ163)

Silicon P-channel junction FET

Unit: mm

+0.10

–0.05

For switching circuits

0.40

+0.10

0.16

–0.06

Complementary to 2SK1103

■ Features

• Low ON resistance

• Low-noise characteristics

(0.95) (0.95)

1.9 ^0.1

+0.20

■ Absolute Maximum Ratings T_a= 25°C

2.90

–0.05

Parameter

Gate-drain surrender voltage

Drain current

Symbol

V_GDS

I_D

Rating

Unit

10˚

−20

°C

Gate current

I_G

−10

1: Source

2: Drain

3: Gate

Power dissipation

P_D

150

Channel temperature

Storage temperature

T_ch

150

EIAJ: SC-59

Mini3-G1 Package

T_stg

−55 to +150

°C

Marking Symbol: 4M

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Gate-drain surrender voltage

Drain-source cutoff current ^*

Gate-source cutoff current

Gate-source cutoff voltage

Forward transfer admittance

Drain-source ON resistance

Symbol

V_GDS

I_DSS

Conditions

Min

Typ

Max

Unit

I_G= 10 µA, V_DS= 0

V_DS= −10 V, V_GS= 0

− 0.6

−6.0

I_GSS

V_GS= 30 V, V_DS= 0

V_GSC

Y_fs

V_DS= −10 V, I_D= −10 µA

V_DS= −10 V, I_D= −1 mA, f = 1 kHz

1.5

2.5

300

3.5

1.8

Ω

R_DS(on)V_DS= −10 mV, V_GS= 0

C_iss

V_DS= −10 V, V_GS= 0, f = 1 MHz

Short-circuit forward transfer capacitance

(Common source)

C_rss

Reverse transfer capacitance

(Common source)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. Observe precautions for handling. Electrostatic sensitive devices.

3. : Rank classification

Rank

I_DSS(mA)

− 0.6 to −1.5

−1.0 to −3.0

−2.5 to −6.0

Note) The part number in the parenthesis shows conventional part number.

Publication date: March 2004

SJF00001CED

2SJ0163

P_D T_a

I_D V_DS

I_D V_GS

200

150

100

−4.0

−3.0

−2.0

−1.0

3.0

2.5

2.0

1.5

1.0

0.5

V_DS= −10 V

T_a= 25°C

V_GS= 0 V

0.2 V

0.4 V

0.6 V

0.8 V

120

160

−2

−4

−6

−8

−10 −12

(

)

( )

Drain-source voltage V_DSV

Ambient temperature T_a°C

(

)

Gate-source voltage V_GS

Y_fs  V_GS

Y_fs  I_D

C_iss, C_oss, C_rss V_DS

4.0

3.0

2.0

1.0

f = 1 MHz

V_GS= 0

T_a= 25°C

V_DS= −10 V

f = 1 kHz

T_a= 25°C

V_DS= −10 V

f = 1 kHz

T_a= 25°C

C_iss

C_oss

C_rss

2.0

1.5

1.0

0.5

10²

−2

−4

−6

−8

−10 −12

(

)

(

)

( )

Drain-source voltage V_DSV

Drain current I_DmA

Gate-source voltage V_GS

SJF00001CED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of

the products or technical information described in this material and controlled under the "Foreign Exchange

and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteristics and

applied circuits examples of the products. It neither warrants non-infringement of intellectual property right

or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical

information as described in this material.

(4) The products described in this material are intended to be used for standard applications or general elec-

tronic equipment (such as office equipment, communications equipment, measuring instruments and house-

hold appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-

tion equipment, life support systems and safety devices) in which exceptional quality and reliability are

required, or if the failure or malfunction of the products may directly jeopardize life or harm the human

body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products,

therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-

tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-

ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not

be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such

as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent

physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life

and amount of time let standing of unsealed items) agreed upon when specification sheets are individually

exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

2SJ0163P [PANASONIC]

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