2SJ0163(2SJ163) [ETC]
Small-signal device - Small-signal FETs - Junction FETs ; 小信号器件 - 小信号场效应管 - 场效应管结\n型号: | 2SJ0163(2SJ163) |
厂家: | ETC |
描述: | Small-signal device - Small-signal FETs - Junction FETs
|
文件: | 总3页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Silicon Junction FETs (Small Signal)
2SJ0163 (2SJ163)
Silicon P-Channel Junction FET
For general switching
Unit: mm
Complementary to 2SK1103
+0.10
–0.05
0.40
+0.10
–0.06
0.16
3
■ Features
■ Low ON-resistance
■ Low-noise characteristics
1
2
(0.95) (0.95)
1.9±0.1
+0.20
■ Absolute Maximum Ratings (Ta = 25°C)
2.90
–0.05
Parameter
Gate to Drain voltage
Drain current
Symbol
VGDS
ID
Ratings
65
Unit
V
10˚
−20
mA
mA
mW
°C
Gate current
IG
−10
Allowable power dissipation
Channel temperature
Storage temperature
PD
150
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini3-G1 Package
Tch
150
Tstg
−55 to +150
°C
Marking Symbol (Example): 4M
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
VDS = −10 V, VGS = 0
min
typ
max
−6
Unit
mA
nA
V
*
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
IDSS
− 0.2
IGSS
VGS = 30 V, VDS = 0
10
VGDS
VGSC
| Yfs |
RDS(on)
IG = 10 µA, VDS = 0
65
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
VDS = −10 V, ID = −10 µA
VDS = −10 V, ID = −1 mA, f = 1 kHz
VDS = −10 mV, VGS = 0
1.5
2.5
300
12
3.5
V
1.8
mS
Ω
Input capacitance (Common Source) Ciss
pF
pF
VDS = −10 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance (Common Source) Crss
4
* IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
− 0.2 to −1 − 0.6 to −1.5
4MO 4MP
−1 to −3
4MQ
−2.5 to −6
4MR
Marking Symbol
Note) The part number in the parenthesis shows conventional part number.
Publication date: January 2002
SJF00001BED
1
2SJ0163
PD
Ta
ID
VDS
ID VGS
200
175
150
125
100
75
−4.0
−3.5
−3.0
−2.5
−2.0
−1.5
−1.0
− 0.5
0
−3.0
−2.5
−2.0
−1.5
−1.0
− 0.5
0
VDS = −10 V
Ta = 25°C
VGS = 0 V
0.2 V
0.4 V
50
0.6 V
0.8 V
25
0
0
20 40 60 80 100 120 140 160
0
−2
−4
−6
−8
−10 −12
0
1
2
3
4
5
(
)
( )
V
( )
Gate to source voltage VGS V
Ambient temperature Ta °C
Drain to source voltage VDS
| Yfs | VGS
| Yfs | ID
Ciss, Coss, Crss
VDS
4.0
16
14
12
10
8
24
20
16
12
8
f = 1 MHz
VGS = 0
Ta = 25°C
VDS = −10 V
VDS = −10 V
f = 1 kHz
Ta = 25°C
3.5 f = 1 kHz
Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
Ciss
6
4
4
Coss
Crss
2
0
0
−1
2.0
1.5
1.0
0.5
0
0
−2
−4
−6
−8
−10 −12
−3
−10
−30
−100
( )
V
(
)
( )
Drain to source voltage VDS V
Gate to source voltage VGS
Drain current ID mA
SJF00001BED
2
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2001 MAR
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