2SD1820GS [PANASONIC]
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | 2SD1820GS |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件： | 总4页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1820G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219G
■ Features
■ Package
•
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipment an
automatic insertion through the tape packing and the magazine
packing.
Code
SMini3-F2
Markng Symbol: X
Pin Nae
1: B
•
■ Absolute Maximum Ratings Ta = 25°C
2: Em
Parameter
Symbol
Ratin
Unit
V
ollector
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) VEBO
V
5
V
Collector current
ICP
PC
Tj
500
mA
A
Peak collector current
Collector power dissipati
Junction temperature
Storage temperatu
1
15
mW
°C
°C
50
Tstg
−55 to +50
■ Electricharacteristis Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
50
5
Typ
Max
Unit
V
Colletor-base voltage (Emitter opn)
Collectorltag(Base open)
Emitterollector open)
Collector-basnt (Emitter open)
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µA, IC = 0
V
VCB = 20 V, IE = 0
0.1
µA
1
2
Forward current nsfer ratio *
hFE1
hFE2
VCE = 10 VIC = 150 mA
VCE = 10 V, IC = 500 mA
85
40
340
*
1
Collector-emitter saturation voltage *
VCE(sat) IC = 300 mA, IB = 30 mA
0.35
200
6
0.60
15
V
MHz
pF
1
Transition frequency *
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE IDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
85 to 170
XQ
R
120 to 240
XR
S
170 to 340
XS
No-rank
85 to 340
X
hFE1
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2007
SJC00373AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1820G
PC Ta
IC VCE
IC IB
240
200
160
120
80
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
A
1 mA
40
0
0
40
80
120
160
0
8
12
16
2
2
4
8
)
10
(
)
(
(
Ambient temperature Ta °C
ollectoemitter voltage VCE
Base current IB mA
VCE(sat) IC
VBE(sat) IC
hFE IC
100
10
300
250
200
150
10
50
100
10
IC / IB = 10
IC / IB = 10
VCE = 10 V
Ta = 75°C
25°C
25°C
−25°C
Ta = −25°C
1
1
75°C
Ta 75°C
2
.1
.01
−25°C
0.1
0.01
0
0.01
0.1
1
10
0.1
1
10
0.01
0.1
1
10
(
( )
Collector current IC A
currenIC
(
A
)
Collector current IC
IE
Co VCB
VCER RBE
240
12
120
IE = 0
VCB = 10 V
T= 25°C
IC = 2 mA
Ta = 25°C
f = 1 MHz
= 25°C
200
160
120
80
10
8
100
80
60
40
20
0
6
4
40
2
0
−1
0
−10
Emitter current IE mA
−100
1
10
100
1
10
100
1000
)
(
)
(
V
)
(
Base-emitter resistance RBE kΩ
Collector-base voltage VCB
SJC00373AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.5)
1.0 0.10
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifictions saisfy your requirements.
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defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
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