2SD1821 [PANASONIC]
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification); NPN硅外延平面型（适用于高击穿电压的低频和低噪声放大）
| 型号： | 2SD1821 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1821, 2SD1821A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
Unit: mm
Features
High collector to emitter voltage VCEO
2.1±0.1
■
0.425
1.25±0.1
0.425
●
.
●
●
Low noise voltage NV.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
3
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
Ratings
150
Unit
Collector to
2SD1821
2SD1821A
2SD1821
VCBO
V
base voltage
Collector to
185
0.2±0.1
150
VCEO
V
emitter voltage 2SD1821A
Emitter to base voltage
Peak collector current
Collector current
185
1:Base
VEBO
ICP
IC
5
V
mA
mA
mW
˚C
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
100
50
(2SD1821)
(2SD1821A)
Marking symbol : P
Collector power dissipation
Junction temperature
Storage temperature
PC
150
L
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = 100V, IE = 0
1
µA
Collector to emitter 2SD1821
150
185
5
VCEO
IC = 100µA, IB = 0
V
V
voltage
2SD1821A
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
*
Forward current transfer ratio
hFE
VCE = 5V, IC = 10mA
130
330
1
Collector to emitter saturation voltage VCE(sat)
IC = 30mA, IB = 3mA
V
MHz
pF
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
150
Collector output capacitance
Cob
2.3
Noise voltage
NV
150
mV
*hFE Rank classification
Rank
hFE
R
S
130 ~ 220
PR
185 ~ 330
PS
2SD1821
Marking
Symbol
2SD1821A
LR
LS
1
Transistor
2SD1821, 2SD1821A
PC — Ta
IC — VCE
IC — VBE
240
200
160
120
80
120
100
80
60
40
20
0
120
Ta=25˚C
VCE=10V
25˚C
100
80
60
40
20
0
IB=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
Ta=75˚C
–25˚C
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
40
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10 12 14 16
0
0.4
0.8
1.2
1.6
2.0
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
600
200
160
120
80
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
500
400
300
200
100
0
3
1
Ta=75˚C
25˚C
Ta=75˚C
–25˚C
0.3
0.1
25˚C
–25˚C
40
0.03
0.01
0
–1
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
–3
–10
–30
–100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
5
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
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