2SD1821A [KEXIN]

Silicon NPN Epitaxial Planar Type; NPN硅外延平面型


型号：	2SD1821A
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	Silicon NPN Epitaxial Planar Type NPN硅外延平面型
文件：	总1页 (文件大小：46K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Transistors

Silicon NPN Epitaxial Planar Type

2SD1821A

Features

High collector-emitter voltage VCEO

Low noise voltage NV

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CP

Rating

185

Unit

185

Peak collector current

Collector current

100

I^C

Collector power dissipation

Junction temperature

Storage temperature

P^C

150

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CEO

V^EBO

I^CBO

Testconditons

Min

185

Typ

Max

Unit

Collector-emitter voltage

Emitter-base voltage

IC = 100 ìA, IB = 0

IE = 10 ìA, IC = 0

Collector-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

VCB = 100 V, IE = 0

VCE = 5 V, IC = 10 mA

ìA

h^FE

130

330

V^CE(sat)IC = 30 mA, IB = 3 mA

f^T

VCB = 10 V, IE = -10 mA, f = 200 MHz

150

2.3

MHz

Collector output capacitance

C^ob

VCB = 10 V, IE = 0, f = 1 MHz

V^CE= 10 V, IC = 1 mA, GV = 80 dB, Rg

= 100KÙ, Function = FLAT

Noixe voltage

150

hFE Classification

Marking

Rank

h^FE

130 220

185 330

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