2SD1821S [PANASONIC]
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN;![2SD1821S](http://pdffile.icpdf.com/pdf2/p00286/img/icpdf/2SD1821S_1718465_icpdf.jpg)
型号: | 2SD1821S |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, SC-70, 3 PIN 放大器 光电二极管 晶体管 |
文件: | 总3页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Transistor
2SD1821, 2SD1821A
Silicon NPN epitaxial planar type
Unit: mm
For high breakdown voltage low-frequency and low-noise
amplification
+0.10
–0.05
+0.1
–0.0
0.15
0.3
3
■ Features
• High collector to emitter voltage VCEO
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
automatic insertion through the tape packing and the maga-
and
zine packing
10°
■ Absolute Maximum Ratings Ta = 25°C
1: Base
2: Emitter
Parameter
Symbol
Rating
Unit
3: Collector
EIAJ: SC-70
SMini3-G1 Package
2SD1821
2SD1821A
2SD1821
2SD1821A
VCBO
150
185
V
Collector to
base voltage
VCEO
150
V
Collector to
Marking symbo:l P (2SD1821)
L (2SD1821A)
emitter voltage
185
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
5
V
100
mA
mA
mW
°C
50
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
ICBO
Conditions
CB = 100 V, IE = 0
C = 100 µA, IB = 0
Min
Typ
Max
Unit
µA
V
Collector cutoff current
V
1
2SD1821
VCEO
I
150
185
5
Collector to emitter
voltage
2SD1821A
Emitter to base voltage
VEBO
hFE
IE = 10 µA, IC = 0
CE = 5 V, IC = 10 mA
C = 30 mA, IB = 3 mA
V
Forward current transfer ratio *
Collector to emitter saturation voltage
Transition frequency
V
130
330
1
VCE(sat)
fT
I
V
MHz
pF
V
V
V
CB = 10 V, IE = −10 mA, f = 200 MHz
150
2.3
Collector output capacitance
Noise voltage
Cob
CB = 10 V, IE = 0, f = 1 MHz
NV
CE = 10 V, IC = 1 mA, GV = 80 dB
150
mV
Rg = 100 kΩ, Function = FLAT
Note) : hFE Rank classification
*
Rank
R
S
185 to 330
PS
hFE1
130 to 220
2SD1821
2SD1821A
PR
LR
Marking
symbol
LS
Publication date: April 2002
SJC00228BED
1
2SD1821, 2SD1821A
PC
Ta
IC
VCE
IC
VBE
120
100
80
60
40
20
0
240
200
160
120
80
120
100
80
60
40
20
0
Ta = 25°C
VCE = 10 V
25°C
I
B = 2.0 mA
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
Ta = 75°C
−25°C
0.6 mA
0.4 mA
0.2 mA
40
0
0
2
4
6
8
10
(
12
)
0
40
80
120
160
0
0.4
0.8
1.2
1.6
2.0
(
)
Collector to emitter voltage VCE
V
Ambient temperature Ta °C
( )
V
Base to emitter voltage VBE
VCE(sat)
IC
hFE
IC
fT
IE
200
160
120
80
100
600
500
400
300
200
100
0
VCB = 10 V
Ta = 25°C
IC / IB = 10
VCE = 10 V
30
10
3
1
Ta = 75°C
25°C
Ta = 75°C
−25°C
−25°C
0.3
0.1
25°C
40
0.03
0.01
0
−1
−3
−10
−30
−100
0.1 0.3
1
3
10
30
100
0.1 0.3
1
3
10
30
100
( )
Emitter current IE mA
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob
VCB
5
4
3
2
1
0
IE = 0
f = 1 MHz
Ta = 25°C
1
3
10
30
100
( )
V
Collector to base voltage VCB
SJC00228BED
2
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-
ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative character-
istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or gen-
eral electronic equipment (such as office equipment, communications equipment, measuring in-
struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
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Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
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2001 MAR
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