2SD1823 [KEXIN]
Silicon NPN Epitaxial Planar Type; NPN硅外延平面型
| 型号： | 2SD1823 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Epitaxial Planar Type |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD1823
Features
High forward current transfer ratio hFE.
Low collector-emitter saturation voltage VCE(sat).
High emitter-base voltage VEBO.
Low noise voltage NV.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
50
40
V
15
V
Collector current
50
mA
mA
mW
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
100
PC
150
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC = 10 ìA, IE = 0
Min
50
Typ
Max
Unit
V
Collector-base voltage
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
Collector-emitter voltage
Emitter-base voltage
IC = 1 mA, IB = 0
40
V
IE = 10 ìA, IC = 0
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VCE = 10 V, IC = 2 mA
15
V
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
0.1
1
ìA
ìA
400
2000
VCE(sat) IC = 10 mA, IB = 1 mA
fT VCB = 10 V, IE = ?2 mA, f = 200 MHz
0.05 0.20
120
V
MHz
hFE Classification
1Z
S
Marking
Rank
hFE
R
T
400 800
600 1200
1000 2000
1
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