2SD1823G [PANASONIC]
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN;型号: | 2SD1823G |
厂家: | PANASONIC |
描述: | Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN 放大器 光电二极管 晶体管 |
文件: | 总4页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1823G
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Package
•
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
• Low noise voltage NV
Code
SMini3-F2
MarkinSymbol: 1Z
Pin
•
•
• S-Mini type package, allowing downsizing of thequipment
and automatic insertion through the tape packing ad the maga-
zine packing.
1: B
mitt
Colector
■ Absolute Maximum Ratings Ta = 25°
Parameter
ymbol
VCB
CEO
VEBO
IC
Rating
Unit
V
Collector-base voltage (Emitter
Collector-emitter voltage Base )
Emitter-base voltage (Collectr open)
Collector current
50
15
V
V
50
mA
mA
mW
°C
Peak collector urre
I
100
Collector oer disipatin
unctiotemure
150
150
Storge temre
stg
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C 3°C
ter
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
50
Typ
Max
Unit
V
CollectorEmitter open)
Collector-emiage (Base opn)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
40
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 20 V, IB = 0
VCE = 10 V, IC = 2 mA
15
V
0.1
1
µA
µA
ICEO
hFE
400
2000
0.20
VCE(sat) IC = 10 mA, IB = 1 mA
fT VB = 10 V, IE = −2 mA, f = 200 MHz
0.05
120
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
S
T
hFE
400 to 800
600 to 1 200 1000 to 2000
Publication date: May 2007
SJC00375AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1823G
PC Ta
IC VCE
IC VBE
200
160
120
80
120
100
80
60
40
0
160
120
80
40
0
VCE = 10 V
Ta = 25°C
25°C
Ta = 75°C
−25°C
IB = 100 µA
9µA
80 µ
70 µA
60 µA
A
µA
30 µA
40
20 µA
10 µA
0
0
40
80
120
160
0.4
0.8
2
1.6
2.0
0
4
8
10
1
(
)
( )
Base-emitter voltage VBE V
Ambient temperature Ta °C
(
Collectoemitter voltage VCE
VCE(sat) IC
hFE IC
fT IE
1800
1500
120
900
300
0
100
10
250
200
150
100
50
VCB = 10 V
Ta = 25°C
IC / IB = 10
VCE = 10 V
Ta = 75°C
25°C
1
−25°C
Ta = 75°C
−25°
25°C
.1
.01
0
0.
1
10
100
1
10
100
− 0.1
−1
)
Emiter current IE mA
−10
−100
(
)
Collector current IC mA
(
(
urrenIC m
VCB
8
IE = 0
= 1 MHz
Ta = 25°C
6
4
2
0
1
10
100
(
)
V
Collector-base voltage VCB
SJC00375AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.5)
1.0 0.10
(5°)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
相关型号:
2SD1823G-S
50 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SD1823GR
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SD1823GT
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
PANASONIC
2SD1823H
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC
2SD1823TX
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
PANASONIC
2SD1824
High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)
TYSEMI
©2020 ICPDF网 联系我们和版权申明