2SD1821-S [KEXIN]
NPN Transistors;
| 型号： | 2SD1821-S |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：925K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1821
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Low noise voltage NV.
● Complementary to 2SB1220
1 Base
2 Emitter
3 Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
150
Unit
V
VCBO
VCEO
VEBO
150
5
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
50
mA
mW
℃
I
CP
100
P
C
150
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
150
150
5
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I = 0
CB= 100 V , I = 0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
1
uA
V
I
EB= 5V , I
=30mA, I
C
=0
0.1
1
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
C
B
=3mA
=3mA
V
I
C
=30mA, I
B
1.2
330
hFE
V
CE= 5V, I
C= 10mA
130
V
R
CE = 10V, I
C = 1mA, GV = 80dB
Noise voltage
NV
150
mV
g
= 100kΩ, Function = FLAT
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
= -10 mA,f=200MHz
2.3
pF
f
E
150
MHz
■ Classification of hfe
Type
Range
Marking
2SD1821-R
130-220
PR
2SD1821-S
185-330
PS
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1821
■ Typical Characterisitics
PC — Ta
IC — VCE
IC — VBE
240
120
120
100
80
60
40
20
0
Ta=25˚C
VCE=10V
25˚C
200
160
120
80
100
IB=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
Ta=75˚C
–25˚C
80
60
40
20
0
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
40
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10 12 14 16
0
0.4
0.8
1.2
1.6
2.0
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
600
200
160
120
80
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
500
400
300
200
100
0
3
1
Ta=75˚C
25˚C
Ta=75˚C
–25˚C
0.3
0.1
25˚C
–25˚C
40
0.03
0.01
0
–1
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
–3
–10
–30
–100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
5
IE=0
f=1MHz
Ta=25˚C
4
3
2
1
0
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
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