2SD1819G-R [PANASONIC]
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | 2SD1819G-R |
| 厂家： | 
PANASONIC |
| 描述： | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, SMINI3-F2, 3 PIN 晶体 小信号双极晶体管 |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1819A
Silicon NPN epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SB1218A
2.1±0.1
0.425
1.25±0.1
0.425
Features
High foward current transfer ratio hFE
■
●
.
1
●
●
Low collector to emitter saturation voltage VCE(sat)
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
3
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.2±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
60
50
V
7
V
1:Base
200
mA
mA
mW
˚C
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
IC
100
Collector power dissipation
Junction temperature
Storage temperature
PC
150
Marking symbol : Z
Tj
150
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
Unit
µA
µA
V
VCB = 20V, IE = 0
Collector cutoff current
ICEO
VCE = 10V, IB = 0
100
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
60
50
7
IC = 2mA, IB = 0
V
IE = 10µA, IC = 0
V
*
hFE1
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
160
90
460
0.3
Forward current transfer ratio
hFE2
Collector to emitter saturation voltage VCE(sat)
0.1
150
3.5
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Cob
*hFE1 Rank classification
Rank
hFE1
Q
R
S
160 ~ 260
ZQ
210 ~ 340
ZR
290 ~ 460
ZS
Marking Symbol
1
Transistor
2SD1819A
PC — Ta
IC — VCE
IB — VBE
240
200
160
120
80
60
50
40
30
20
10
0
1200
1000
800
600
400
200
0
Ta=25˚C
VCE=10V
Ta=25˚C
IB=160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
40
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
(
)
(
V
)
(
V
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base to emitter voltage VBE
IC — VBE
IC — IB
VCE(sat) — IC
200
160
120
80
240
100
IC/IB=10
VCE=10V
VCE=10V
Ta=25˚C
30
10
200
160
120
80
3
1
25˚C
Ta=75˚C
–25˚C
0.3
0.1
25˚C
Ta=75˚C
40
40
–25˚C
0.03
0.01
0
0
0
0.4
0.8
1.2
1.6
2.0
0
200
400
600
800
1000
0.1
0.3
1
3
10
30
100
(
V
)
(
)
(
)
Base to emitter voltage VBE
Base current IB µA
Collector current IC mA
hFE — IC
fT — IE
600
500
400
300
200
100
0
300
240
180
120
60
VCE=10V
VCB=10V
Ta=25˚C
Ta=75˚C
25˚C
–25˚C
0
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
Collector current IC mA
Emitter current IE mA
2
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