2SD1820 [KEXIN]
Silicon NPN Epitaxial Planar Type; NPN硅外延平面型
| 型号： | 2SD1820 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Epitaxial Planar Type |
| 文件： | 总1页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD1820
Features
Low collector-emitter saturation voltage VCE(sat).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
25
V
5
500
V
Collector current
mA
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
1
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC = 10 ìA, IE = 0
Min
30
25
5
Typ
Max
Unit
V
Collector-base voltage
VCBO
VCEO
VEBO
ICBO
hFE
Collector-emitter voltage
Emitter-base voltage
IC = 2 mA, IB = 0
V
IE = 10 ìA, IC = 0
V
Collector cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
VCB = 20 V, IE = 0
VCE = 10 V, IC = 150 mA
0.1
340
0.6
ìA
85
VCE(sat) IC = 300 mA, IB = 30 mA
0.35
200
6
V
fT
VCB = 10 V, IE = -50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
MHz
pF
Collector output capacitance
Cob
15
hFE Classification
Marking
Rank
hFE
WQ
Q
WR
R
WS
S
85 170
120 240
170 340
1
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