2SD1820 [PANASONIC]
Silicon NPN epitaxial planer type; NPN硅外延平面型
| 型号： | 2SD1820 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planer type |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD1820, 2SD1820A
Silicon NPN epitaxial planer type
For general amplification
Unit: mm
Complementary to 2SB1219 and 2SB1219A
2.1±0.1
Features
■
0.425
1.25±0.1
0.425
●
Low collector to emitter saturation voltage VCE(sat)
.
●
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
3
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
Ratings
Unit
Collector to
2SD1820
2SD1820A
2SD1820
30
VCBO
V
base voltage
Collector to
60
25
0.2±0.1
VCEO
V
emitter voltage 2SD1820A
Emitter to base voltage
Peak collector current
Collector current
50
VEBO
ICP
IC
5
1
V
A
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
500
mA
mW
˚C
S–Mini Type Package
Collector power dissipation
Junction temperature
Storage temperature
PC
150
(2SD1820)
(2SD1820A)
Marking symbol : W
Tj
150
X
Tstg
–55 ~ +150
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
Collector cutoff current
VCB = 20V, IE = 0
0.1
µA
Collector to base
voltage
2SD1820
2SD1820A
30
60
25
50
5
VCBO
IC = 10µA, IE = 0
V
Collector to emitter 2SD1820
VCEO
VEBO
IC = 2mA, IB = 0
V
V
voltage
2SD1820A
Emitter to base voltage
IE = 10µA, IC = 0
*1
hFE1
hFE2
VCE = 10V, IC = 150mA*2
VCE = 10V, IC = 500mA*2
IC = 300mA, IB = 30mA*2
VCB = 10V, IE = –50mA*2, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
85
40
160
340
0.6
15
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
0.35
200
6
V
MHz
pF
Transition frequency
fT
Collector output capacitance
Cob
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE1
Q
R
S
85 ~ 170
WQ
120 ~ 240
WR
170 ~ 340
WS
2SD1820
Marking
Symbol
2SD1820A
XQ
XR
XS
1
Transistor
2SD1820, 2SD1820A
PC — Ta
IC — VCE
IC — IB
240
200
160
120
80
800
700
600
500
400
300
200
100
0
800
Ta=25˚C
VCE=10V
Ta=25˚C
700
600
500
400
300
200
100
0
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
40
0
0
20 40 60 80 100 120 140 160
0
4
8
12
16
20
0
2
4
6
8
10
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Base current IB mA
VCE(sat) — IC
VBE(sat) — IC
hFE — IC
100
100
300
250
200
150
100
50
IC/IB=10
IC/IB=10
VCE=10V
30
10
30
10
Ta=75˚C
25˚C
3
1
3
1
25˚C
–25˚C
Ta=–25˚C
75˚C
Ta=75˚C
0.3
0.1
0.3
0.1
25˚C
–25˚C
0.03
0.01
0.03
0.01
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
A
Collector current IC
Collector current IC
Collector current IC
fT — IE
Cob — VCB
VCER — RBE
240
200
160
120
80
12
10
8
120
100
80
60
40
20
0
IE=0
f=1MHz
Ta=25˚C
VCB=10V
Ta=25˚C
IC=2mA
Ta=25˚C
6
2SD1820A
2SD1820
4
40
2
0
–1
0
–3
–10
–30
–100
1
3
10
30
100
1
3
10
30
100 300 1000
(
)
( )
V
(
)
Emitter current IE mA
Collector to base voltage VCB
Base to emitter resistance RBE kΩ
2
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