2SD1819GS [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN;
| 型号： | 2SD1819GS |
| 厂家： | 
PANASONIC |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1819G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1218G
■ Features
■ Package
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• S-Mini type package, allowing downsizing of the equipmet and
automatic insertion through the tape pacing and the mgazine
pacing.
Code
SMini32
Mambol: Z
Pin N
ase
•
•
2: Emter
3: Collector
■ Absolute Maximum Ratings Ta = 25°
Parameter
ymbol
VBO
VCEO
EBO
IC
Rating
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base
Emitter-base voltage (Coltor on)
Collector current
60
50
V
7
00
V
mA
mA
mW
°C
Peak collecor curnt
ICP
200
Collector power dissiption
Junction tempratur
150
150
orage teme
Ts
−55 to +150
°C
■ Electrical Characeristics Ta = 25°C 3°C
mete
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
60
0
7
Typ
Max
Unit
V
Collec(Emiter open)
Collector-e (Base open)
Emitter-base v(Collector op)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
V
IE = 10 µAIC = 0
V
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VCE = 10 V, IC = 2 mA
VCE = 2 V, IC = 100 mA
0.1
100
460
µA
µA
ICEO
*
hFE1
160
90
hFE2
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = 100 mA, IB = 10 mA
0.1
150
3.5
0.3
V
MHz
pF
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
210 to 340
ZR
S
290 to 460
ZS
No rank
160 to 460
Z
hFE1
160 to 260
ZQ
Marking symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2007
SJC00372AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1819G
PC Ta
IC VCE
IB VBE
60
50
40
30
20
10
0
1200
1000
800
600
400
0
200
160
120
80
Ta = 25°C
VCE = 10 V
Ta = 25°C
IB = 160 µA
140 µA
10 µA
100 A
80 µA
µA
40 µA
20 µA
40
0
0
4
6
8
1
0.2
0.4
.6
0.8
1.0
0
40
80
120
160
(
( )
Base-emitter voltage VBE V
Collect-emitter voltage VCE
(
)
Ambient temperature Ta °C
IC VBE
IC IB
VCE(sat) IC
200
100
10
240
200
16
120
IC / IB = 10
VCE =
VCE = 10 V
T= 25°C
160
120
80
0
2C
1
Ta = 75°C
−°C
25°C
T= 75°C
−25°C
0.1
0.01
40
0
0.4
0.8
1.2
1.6
2.0
0.1
1
10
100
0
200
400
600
800
1000
)
(
)
Bvolte VBE
V
(
)
Colletor current IC mA
Base current IB µA
IC
f IE
300
240
180
120
60
600
500
400
300
200
100
0
VCB = 10 V
Ta = 5°C
VCE = 10 V
Ta = 75°C
25°C
−25°C
0
− 0.1
−1
−10
−100
0.1
1
10
100
(
)
Emitter current IE mA
(
)
Collector current IC mA
SJC00372AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.5)
1.0 0.10
(5°)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
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