2SD1277 [PANASONIC]
Silicon NPN triple diffusion planar type Darlington(For midium speed power switching); 硅NPN三重扩散平面型达林顿（对煤层炮高速功率开关）
| 型号： | 2SD1277 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type Darlington(For midium speed power switching) |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
Complementary to 2SB951 and 2SB951A
2.7±0.2
Features
High foward current transfer ratio hFE
■
●
φ3.1±0.1
●
High-speed switching
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
+0.2
–0.1
0.5
0.8±0.1
Parameter
Symbol
Ratings
Unit
Collector to
2SD1277
2SD1277A
2SD1277
60
VCBO
V
2.54±0.25
base voltage
Collector to
80
5.08±0.5
60
1
2
3
VCEO
V
1:Base
2:Collector
3:Emitter
emitter voltage 2SD1277A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
7
V
A
A
TO–220 Full Pack Package(a)
12
Internal Connection
IC
8
C
E
Collector power TC=25°C
45
PC
W
dissipation
Ta=25°C
2
B
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
2
Unit
µA
mA
V
Collector cutoff
2SD1277
VCB = 60V, IE = 0
current
2SD1277A
VCB = 80V, IE = 0
VEB = 7V, IC = 0
Emitter cutoff current
IEBO
Collector to emitter 2SD1277
voltage 2SD1277A
60
80
VCEO
IC = 30mA, IB = 0
*
hFE1
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 8mA
2000
500
10000
Forward current transfer ratio
hFE2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
1.5
2
V
V
IC = 4A, IB = 8mA
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
20
MHz
µs
0.5
4
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
µs
1
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
2000 to 5000 4000 to 10000
1
Power Transistors
2SD1277, 2SD1277A
PC — Ta
IC — VCE
VCE(sat) — IC
50
12
10
8
(1) IC/IB=250
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
(1)
(2) IC/IB=500
(3) IC/IB=1000
TC=25˚C
10
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
40
30
20
10
0
(3)
(2)
(1)
3
1
IB=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
6
0.3
0.1
1.5mA
1.0mA
4
(2)
0.5mA
2
0.03
0.01
(3)
(4)
0
0
20 40 60 80 100 120 140 160
0
1
2
3
4
5
0.1
0.3
1
3
10
30
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
VCB(sat) — IC
hFE — IC
100000
VCE=3V
IC/IB=500
TC=100˚C
IC/IB=500
10
10
30000
TC=100˚C
25˚C
25˚C
3
1
3
1
10000
TC=–25˚C
100˚C
–25˚C
25˚C
–25˚C
3000
1000
0.3
0.1
0.3
0.1
300
100
0.03
0.01
0.03
0.01
30
10
0.1
0.3
1
3
10
30
0.1
0.3
1
3
10
30
0.1
0.3
1
3
10
30
100
(
A
)
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
ICP
IC
t=10ms
1ms
(1)
(2)
3
1
DC
1
0.3
0.1
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
(
V
)
( )
t s
Collector to emitter voltage VCE
Time
2
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