2SC3944A [PANASONIC]
Silicon NPN epitaxial planar type(For low-frequency driver and high power amplification); NPN硅外延平面型（低频驱动器和高功率放大）
| 型号： | 2SC3944A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type(For low-frequency driver and high power amplification) |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
Unit: mm
Features
■
10.0±0.2
5.5±0.2
4.2±0.2
●
Satisfactory foward current transfer ratio hFE vs. collector cur-
2.7±0.2
rent IC characteristics
●
High transition frequency fT
●
Makes up a complementary pair with 2SA1535 and 2SA1535A,
φ3.1±0.1
which is optimum for the driver-stage of a 60 to 100W output
amplifier
●
Full-pack package which can be installed to the heat sink with
1.3±0.2
one screw
1.4±0.1
+0.2
–0.1
Absolute Maximum Ratings (T =25˚C)
0.5
■
C
0.8±0.1
Parameter
Symbol
Ratings
Unit
2.54±0.25
Collector to
2SC3944
2SC3944A
2SC3944
150
VCBO
V
base voltage
Collector to
180
5.08±0.5
1
2
3
150
VCEO
V
1:Base
2:Collector
3:Emitter
emitter voltage 2SC3944A
Emitter to base voltage
Peak collector current
Collector current
180
VEBO
ICP
5
V
A
A
TO–220 Full Pack Package(a)
1.5
IC
1
15
Collector power TC=25°C
PC
W
dissipation
Ta=25°C
2.0
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICBO
Conditions
min
typ
max
10
Unit
2SC3944
2SC3944A
2SC3944
2SC3944A
VCB = 150V, IE = 0
µA
current
VCB = 180V, IE = 0
10
Collector to base
voltage
150
180
5
VCEO
VEBO
IC = 1mA, IB = 0
V
V
Emitter to base voltage
IE = 10µA, IC = 0
*
hFE1
VCE = 10V, IC = 150mA
VCE = 5V, IC = 500mA
95
50
160
100
0.5
1
220
Forward current transfer ratio
hFE2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
VCB = 10V, IE = –50mA, f = 10MHz
VCB = 10V, IE = 0, f = 1MHz
2
2
V
V
Transition frequency
fT
200
30
MHz
pF
Collector output capacitance
Cob
50
*hFE1 Rank classification
Rank
hFE1
Q
R
95 to 155
130 to 220
1
Power Transistors
2SC3944, 2SC3944A
PC — Ta
VCE(sat) — IC
VBE(sat) — IC
25
10
10
IC/IB=10
IC/IB=10
TC=Ta
3
1
3
1
20
15
10
5
TC=–25˚C
100˚C
25˚C
0.3
0.1
0.3
0.1
TC=100˚C
25˚C
–25˚C
0.03
0.01
0.03
0.01
0
0
20 40 60 80 100 120 140 160
0.01
0.03
0.1
0.3
1
0.01
0.03
0.1
0.3
1
(
)
( )
A
( )
A
Ambient temperature Ta ˚C
Collector current IC
Collector current IC
hFE — IC
fT — IE
Cob — VCB
1000
400
300
200
100
0
100
80
60
40
20
0
VCE=10V
IE=0
f=1MHz
TC=25˚C
VCB=10V
f=10MHz
TC=25˚C
TC=100˚C
25˚C
300
100
–25˚C
30
10
3
1
0.01
0.03
0.1
0.3
1
– 0.01
– 0.03
– 0.1
– 0.3
–1
1
3
10
30
100
( )
A
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Emitter current IE
Area of safe operation (ASO)
10
Single pulse
TC=25˚C
3
1
ICP
IC
t=<50µs
DC
0.3
0.1
t=10ms
1ms
0.03
0.01
0.003
0.001
1
3
10
30
100 300 1000
( )
V
Collector to emitter voltage VCE
2
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