2SC3946 [PANASONIC]
Silicon NPN triple diffusion planar type(For color TV horizontal deflection driver); 硅NPN三重扩散平面型（对于彩电水平偏转驱动程序）
| 型号： | 2SC3946 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For color TV horizontal deflection driver) |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC3946
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
Features
High collector to emitter VCEO
■
●
φ3.1±0.1
●
Large collector power dissipation PC
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
+0.2
–0.1
Absolute Maximum Ratings (T =25˚C)
0.5
■
C
0.8±0.1
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
350
Unit
V
2.54±0.25
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
300
V
5.08±0.5
1
2
3
7.5
V
1:Base
2:Collector
3:Emitter
400
mA
mA
IC
200
TO–220 Full Pack Package(a)
Collector power TC=25°C
15
PC
W
dissipation
Ta=25°C
2.0
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
Collector to base voltage
V
CB = 200V, IE = 0
2
2
IEBO
VEB = 5V, IC = 0
VCBO
VCEO
VCER
VCEO
hFE
IC = 100µA, IE = 0
350
300
350
7.5
40
IC = 5mA, IB = 0
V
Collector to emitter voltage
IC = 100µA, IB = 0, RBE = 1kΩ
IE = 100µA, IC = 0
V
Emitter to base voltage
V
Forward current transfer ratio
VCB = 10V, IC = 10mA
IC = 50mA, IB = 5mA
VCE = 30V, IC = 10mA, f = 1MHz
VCB = 50V, IE = 0, f = 1MHz
250
1
Collector to emitter saturation voltage VCE(sat)
V
MHz
pF
Transition frequency
fT
50
Collector output capacitance
Cob
5
1
Power Transistors
2SC3946
PC — Ta
IC — VCE
IC — VBE
20
200
160
120
80
240
200
160
120
80
VCE=10V
TC=Ta
TC=25˚C
25˚C
–25˚C
TC=75˚C
16
12
8
IB=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
4
40
0.2mA
40
0
0
0
0
40
80
120
160
200
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
200
160
120
80
IC/IB=10
VCE=10V
VCB=30V
f=1MHz
TC=25˚C
10
1000
25˚C
3
1
300
100
TC=100˚C
–25˚C
0.3
0.1
30
10
TC=100˚C
–25˚C
25˚C
40
0.03
0.01
3
1
0
–1
1
3
10
30
100
300
1
3
10
30
100
300
–3
–10 –30 –100 –300 –1000
(
)
( )
A
( )
Emitter current IE A
Collector current IC mA
Collector current IC
Cob — VCB
Area of safe operation (ASO)
20
16
12
8
10
Single pulse
TC=25˚C
IE=0
f=1MHz
TC=25˚C
3
1
ICP
t=10ms
0.3
0.1
IC
1ms
DC
0.03
0.01
4
0.003
0.001
0
1
3
10
30
100
1
3
10
30
100 300 1000
( )
V
( )
V
Collector to base voltage VCB
Collector to emitter voltage VCE
2
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