2SC3947 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3947 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3947
DESCRIPTION
·With TO-3PML package
·High voltage ,high speed
APPLICATIONS
·For TV horizontal output and power
switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
MAX
UNIT
V
Open emitter
Open base
850
500
V
Open collector
7
V
5
A
ICM
Collector current-peak
Base current
8
2
A
IB
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
70
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3947
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
500
850
7
TYP.
MAX
UNIT
V
IC=10mA ;RBE=∞
IC=1mA ;IE=0
V
IE=1mA ;IC=0
V
IC=2.5A ;IB=0.5A
IC=2.5A ;IB=0.5A
1.0
1.5
V
V
V
CE=800V; IE=0
TC=100℃
0.1
1.0
mA
mA
IEBO
Emitter cut-off current
VEB=6V ;IC=0
0.1
30
hFE
DC current gain
IC=2.5A ; VCE=5V
10
fT
Transition frequency
IC=0.5A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
20
70
MHz
pF
COB
Output capacitance
Switching times
tr
tstg
tf
Rise time
0.5
3.0
0.3
μs
μs
μs
IC=2.5A ; VCC=250V
IB1=0.5A; IB2=-1A
Storage time
Fall time
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3947
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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