2SC3944AQ [ISC]
Transistor;
| 型号： | 2SC3944AQ |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3944 2SC3944A
DESCRIPTION
·
·With TO-220Fa package
·Complement to type 2SA1535/1535A
·High transition frequency
APPLICATIONS
·For low-frequency driver and high
power amplification
·Optimum for the driver-stage of a 60W
to 100W output amplifier
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
150
180
150
180
5
UNIT
2SC3944
2SC3944A
2SC3944
2SC3944A
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
1.0
ICM
Collector current-peak
1.5
Ta=25℃
TC=25℃
2.0
PC
Collector power dissipation
W
15
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3944 2SC3944A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
150
180
5
TYP.
MAX
UNIT
2SC3944
Collector-emitter
breakdown voltage
V(BR)CEO
IC=1mA; IB=0
V
2SC3944A
V(BR)EBO
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
IE=10μA; IC=0
V
V
V
VCEsat
IC=0.5 A;IB=50m A
IC=0.5 A;IB=50m A
VCB=150V; IE=0
2.0
2.0
VBEsat
2SC3944
Collector
cut-off current
ICBO
10
μA
2SC3944A
VCB=180V; IE=0
hFE-1
hFE-2
fT
DC current gain
IC=150mA ; VCE=10V
IC=500mA ; VCE=5V
IC=50mA ; VCB=10V
IE=0; VCB=10V;f=1MHz
95
50
220
DC current gain
Transition frequency
Output capacitance
200
30
MHz
pF
COB
hFE classifications
Q
R
95-155
130-220
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3944 2SC3944A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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