SFH-4289 [OSRAM]

GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse mit Linse;
SFH-4289
型号: SFH-4289
厂家: OSRAM GMBH    OSRAM GMBH
描述:

GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse mit Linse

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GaAlAs-IR-Lumineszenzdiode in SMT-Gehäuse mit Linse  
GaAlAs Infrared Emitter in SMT Package with lens  
SFH 4289  
Wesentliche Merkmale  
Features  
• TOPLED mit Linse  
TOPLED with lens  
• GaAIAs-LED mit sehr hohem Wirkungsgrad  
• Gute Linearität (Ie = f [IF]) bei hohen Strömen  
• Gleichstrom- (mit Modulation) oder  
Impulsbetrieb möglich  
Very highly efficient GaAIAs-LED  
Good Linearity (Ie = f [IF]) at high currents  
DC (with modulation) or pulsed operations are  
possible  
• Hohe Zuverlässigkeit  
High reliability  
• Hohe Impulsbelastbarkeit  
• Oberflächenmontage geeignet  
• Gegurtet lieferbar  
High pulse handling capability  
Suitable for surface mounting (SMT)  
Available on tape and reel  
• SFH 4289 Gehäusegleich mit SFH 3219  
SFH 4289 same package as SFH 3219  
Anwendungen  
Applications  
• Miniaturlichtschranken für Gleich- und  
Wechsellichtbetrieb, Lochstreifenleser  
• Industrieelektronik  
• „Messen/Steuern/Regeln“  
• Automobiltechnik  
Miniature photointerrupters  
Industrial electronics  
For drive and control circuits  
Automotive technology  
Sensor technology  
• Sensorik  
• Alarm- und Sicherungssysteme  
• IR-Freiraumübertragung  
Alarm and safety equipment  
IR free air transmission  
Typ  
Type  
Bestellnummer  
Ordering Code  
Gehäuse  
Package  
Kathodenkennzeichnung: abgesetzte Ecke  
cathode marking: bevelled edge  
TOPLED with lens  
SFH 4289  
2001-10-09  
on request  
1
SFH 4289  
Grenzwerte (TA = 25 °C)  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Betriebs- und Lagertemperatur  
Top; Tstg  
40 + 100  
°C  
Operating and storage temperature range  
Sperrspannung  
Reverse voltage  
VR  
5
V
Durchlaßstrom  
Forward current  
IF  
100  
2.5  
180  
450  
mA  
A
Stoßstrom, τ = 10 µs, D = 0  
Surge current  
IFSM  
Ptot  
Verlustleistung  
Power dissipation  
mW  
K/W  
Wärmewiderstand Sperrschicht - Umgebung bei RthJA  
Montage auf FR4 Platine, Padgröße je 16 mm2  
Thermal resistance junction - ambient mounted  
on PC-board (FR4), padsize 16 mm2 each  
Wärmewiderstand Sperrschicht - Lötstelle bei  
Montage auf Metall-Block  
RthJS  
200  
K/W  
Thermal resistance junction - soldering point,  
mounted on metal block  
2001-10-09  
2
SFH 4289  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Wellenlänge der Strahlung  
Wavelength at peak emission  
IF = 100 mA, tp = 20 ms  
λpeak  
880  
nm  
Spektrale Bandbreite bei 50% von Imax  
Spectral bandwidth at 50% of Imax  
IF = 100 m A  
∆λ  
80  
nm  
Abstrahlwinkel  
Half angle  
ϕ
± 25  
Grad  
deg.  
Aktive Chipfläche  
Active chip area  
0.09  
mm2  
mm  
µs  
A
Abmessungen der aktiven Chipfläche  
Dimensions of the active chip area  
L × B  
L × W  
0.3 × 0.3  
0.5  
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf  
auf 10%, bei IF = 100 mA, RL = 50 Ω  
Switching times, Ιe from 10% to 90% and from  
90% to10%, IF = 100 mA, RL = 50 Ω  
Kapazität,  
Co  
15  
pF  
Capacitance  
VR = 0 V, f = 1 MHz  
Durchlaßspannung,  
Forward voltage  
IF = 100 mA, tp = 20 ms  
IF = 1 A, tp = 100 µs  
VF  
VF  
1.5 (1.8)  
3.0 (3.8)  
V
V
Sperrstrom,  
Reverse current  
VR = 5 V  
IR  
0.01 (1)  
µA  
Gesamtstrahlungsfluß,  
Total radiant flux  
IF = 100 mA, tp = 20 ms  
Φe  
TCI  
23  
mW  
%/K  
Temperaturkoeffizient von Ie bzw. Φe,  
IF = 100 mA  
0.5  
Temperature coefficient of Ie or Φe, IF = 100 mA  
Temperaturkoeffizient von VF, IF = 100 mA  
Temperature coefficient of VF, IF = 100 mA  
TCV  
TCλ  
2  
mV/K  
nm/K  
Temperaturkoeffizient von λ, IF = 100 mA  
Temperature coefficient of λ, IF = 100 mA  
+ 0.25  
2001-10-09  
3
SFH 4289  
Strahlstärke Ie in Achsrichtung  
gemessen bei einem Raumwinkel = 0.01 sr  
Radiant Intensity Ie in Axial Direction  
at a solid angle of = 0.01 sr  
Bezeichnung  
Parameter  
Symbol  
Werte  
Values  
Einheit  
Unit  
Strahlstärke  
Radiant intensity  
IF = 100 mA, tp = 20 ms  
Iemin  
Ietyp  
6.3  
17  
mW/sr  
mW/sr  
Strahlstärke  
Ie typ  
140  
mW/sr  
Radiant intensity  
IF = 1 A, tp = 100 µs  
2001-10-09  
4
SFH 4289  
Ιe  
= f (IF)  
Relative Spectral Emission  
Irel = f (λ)  
Radiant Intensity  
Max. Permissible Forward Current  
IF = f (TA)  
Ιe 100 mA  
Single pulse, tp = 20 µs  
OHR00878  
OHR00877  
OHR00883  
10 2  
100  
%
120  
Ι e  
mA  
Ι F  
Ι e (100mA)  
Ι rel  
100  
10 1  
10 0  
80  
80  
60  
40  
20  
0
RthjA = 450 K/W  
60  
40  
20  
0
10 -1  
10 -2  
10 -3  
10 0  
10 1  
10 2  
10 3 mA 10 4  
0
20  
40  
60  
80  
100 ˚C 120  
750  
800  
850  
900  
950 nm 1000  
λ
Ι F  
TA  
Forward Current  
IF = f (VF) single pulse, tp = 20 µs  
Permissible Pulse Handling  
Capability IF = f (tp), TA = 25 °C  
duty cycle D = parameter  
Zusätzliche  
Informationen  
über  
allgemeine  
erhalten Sie auf Anfrage.  
Lötbedingungen  
OHR00886  
104  
OHR00881  
10 1  
For additional information on general  
mA  
A
soldering  
contact us.  
conditions  
please  
Ι F  
Ι F  
D
= 0.005  
0.01  
0.02  
10 0  
10 -1  
10 -2  
10 -3  
0.05  
103  
102  
101  
0.1  
0.2  
0.5  
DC  
t p  
t p  
D =  
Ι F  
T
T
0
1
2
3
4
5
6
V
8
10-5 10-4 10-3 10-2 10-1 100 101 s 102  
t p  
VF  
Radiation Characteristics Irel = f (ϕ)  
40˚  
30˚  
20˚  
10˚  
0˚  
OHL00732  
1.0  
ϕ
50˚  
0.8  
0.6  
0.4  
60˚  
70˚  
0.2  
0
80˚  
90˚  
100˚  
1.0  
0.8  
0.6  
0.4  
0˚  
20˚  
40˚  
60˚  
80˚  
100˚  
120˚  
2001-10-09  
5
SFH 4289  
Maßzeichnung  
Package Outlines  
3.5 (0.138) max.  
2.1 (0.083)  
1.7 (0.067)  
3.0 (0.118)  
2.6 (0.102)  
2.3 (0.091)  
0.9 (0.035)  
2.1 (0.083)  
1
0.7 (0.028)  
2
0.6 (0.024)  
0.4 (0.016)  
Package  
marking  
0.1 (0.004) (typ.)  
0.18 (0.007)  
0.13 (0.005)  
GEOY6956  
Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.  
Published by OSRAM Opto Semiconductors GmbH & Co. OHG  
Wernerwerkstrasse 2, D-93049 Regensburg  
© All Rights Reserved.  
Attention please!  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain  
dangerous substances. For information on the types in question please contact our Sales Organization.  
Packing  
Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office.  
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing  
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs  
incurred.  
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical  
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.  
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected  
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.  
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain  
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.  
2001-10-09  
6

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