SFH-4501 [OSRAM]
Schnelle IR-Lumineszenzdiode (950 nm) im 5 mm Radial-Gehäuse;
| 型号： | SFH-4501 |
| 厂家： | 
OSRAM GMBH |
| 描述： | Schnelle IR-Lumineszenzdiode (950 nm) im 5 mm Radial-Gehäuse |
| 文件： | 总9页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schnelle IR-Lumineszenzdiode (950 nm) im 5 mm Radial-Gehäuse
High-Speed Infrared Emitter (950 nm) in 5 mm Radial Package
SFH 4501, SFH 4502, SFH 4503
SFH 4501
SFH 4502
SFH 4503
Wesentliche Merkmale
Features
• GaAs-LED mit sehr hohem Wirkungsgrad
• Hohe Zuverlässigkeit
• Very highly efficient GaAs-LED
• High reliability
• Gute spektrale Anpassung an
Si-Fotoempfänger
• Spectral match with silicon photodetectors
Anwendungen
Applications
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for steady and varying intensity
• Sensor technology
• Discrete interrupters
• Sensorik
• Diskrete Lichtschranken
Typ
Type
Bestellnummer Gehäuse
Ordering Code Package
SFH 4501
SFH 4502
SFH 4503
Q62702-P5061 5-mm-LED-Gehäuse (T 13/4), schwarz eingefärbt, Anschluß im
2.54-mm-Raster (1/10’’),
Q62702-P5062
Anodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 13/4), black-colored epoxy resin lens,
Q62702-P5305
solder tabs lead spacing 2.54 mm (1/10’’),
anode marking: short lead
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SFH 4501, SFH 4502, SFH 4503
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
3
V
Durchlaßstrom
Forward current
IF (DC)
IFSM
100
2.2
180
375
mA
A
Stoßstrom, tp = 10 µs, D = 0
Surge current
Verlustleistung
Power dissipation
Ptot
mW
K/W
Wärmewiderstand Sperrschicht - Umgebung,
freie Beinchenlänge max. 10 mm
Thermal resistance junction - ambient,
lead length between package bottom and PCB
max. 10 mm
RthJA
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak
950
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 m A, tp = 20 ms
∆λ
40
nm
Abstrahlwinkel
Half angle
SFH 4501
SFH 4502
SFH 4503
ϕ
Grad
deg.
± 7
± 18
± 4
Aktive Chipfläche
Active chip area
0.09
mm2
mm
A
Abmessungen der aktiven Chipfläche
Dimension of the active chip area
L × B
L × W
0.3 × 0.3
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SFH 4501, SFH 4502, SFH 4503
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω
10
ns
Kapazität
Co
35
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlaßspannung,
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (≤ 1.8)
3.2 (≤ 4.0)
V
V
Sperrstrom,
Reverse current
VR = 3 V
IR
0.01 (≤ 10)
µA
Gesamtstrahlungsfluß,
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe
TCI
32
mW
%/K
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
– 0.44
Temperature coefficient of Ie or Φe,
IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 1.5
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
+ 0.2
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SFH 4501, SFH 4502, SFH 4503
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Description
Symbol
Werte
Values
Einheit
Unit
SFH 4501 SFH 4502 SFH 4503
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie typ
63
90
25
50
63
200
mW/sr
mW/sr
Strahlstärke
Ie typ
550
310
1200
Radiant intensity
IF = 1 A, tp = 100 µs
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SFH 4501, SFH 4502, SFH 4503
Ιe
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TA)
Ιe 100 mA
Single pulse, tp = 20 µs
OHF00359
120
OHF00777
OHF00809
10 2
100
80
60
40
20
0
mA
Ι F
Ιerel
Ιe
100
Ιe (100 mA)
80
10 0
10 -1
10 -2
10 -3
RthJA = 375 K/W
60
40
20
0
10 0
10 1
10 2
10 3
10 4
mA
800 850 900 950 1000
nm 1100
0
20
40
60
80
100 ˚C 120
ΙF
λ
TA
Permissible Pulse Handling
Forward Current IF = f (VF)
single pulse, tp = 20 µs
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
OHF00041
101
OHF00784
10 4
mA
tP
A
IF
= tP
IF
ΙF
D
5
T
10 3
10 2
10 1
10 0
10 -1
10 -2
10 -3
T
D
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
100
5
1
10-1
0
0.5
1
1.5
2
2.5
3
3.5
V 4.5
10-5 10-4 10-3 10-2 10-1 100 101 s 102
VF
tp
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SFH 4501, SFH 4502, SFH 4503
Radiation Characteristics Ιrel = f (ϕ)
SFH 4501
40˚
30˚
20˚
10˚
0˚
OHF00859
1.0
50˚
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
20˚
20˚
20˚
40˚
40˚
40˚
60˚
60˚
60˚
80˚
80˚
80˚
100˚
120˚
Radiation Characteristics Ιrel = f (ϕ)
SFH 4502
40˚
30˚
20˚
10˚
0˚
OHF00810
1.0
50˚
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
100˚
120˚
Radiation Characteristics Ιrel = f (ϕ)
SFH 4503
40˚
30˚
20˚
10˚
0˚
OHF01142
1.0
50˚
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
100˚
1.0
0.8
0.6
0.4
0˚
100˚
120˚
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SFH 4501, SFH 4502, SFH 4503
Maßzeichnung
Package Outlines
SFH 4501
Area not flat
9.0 (0.354)
8.2 (0.323)
7.8 (0.307)
7.5 (0.295)
0.6 (0.024)
0.4 (0.016)
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
1.8 (0.071)
Anode
1.2 (0.047)
29.5 (1.161)
27.5 (1.083)
GEXY6952
SFH 4502
Area not flat
7.8 (0.307)
7.5 (0.295)
5.9 (0.232)
5.5 (0.217)
Anode
1.8 (0.071)
1.2 (0.047)
29.0 (1.142)
27.0 (1.063)
Anode
0.6 (0.024)
9.0 (0.354)
8.2 (0.323)
0.4 (0.016)
GEXY6718
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2001-03-09
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SFH 4501, SFH 4502, SFH 4503
SFH 4503
9.0 (0.354)
8.2 (0.323)
7.8 (0.307)
7.5 (0.295)
5.9 (0.232)
5.5 (0.217)
Area not flat
0.6 (0.024)
0.4 (0.016)
1.8 (0.071)
1.2 (0.047)
0.6 (0.024)
0.4 (0.016)
5.7 (0.224)
5.1 (0.201)
29 (1.142)
27 (1.063)
Chip position
Anode
GEXY6048
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
2001-03-09
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SFH 4501, SFH 4502, SFH 4503
Lötbedingungen
Soldering Conditions
Tauch-, Schwall- und Schlepplötung
Dip, Wave and Drag Soldering
Kolbenlötung (mit 1,5-mm-Kolbenspitze)
Iron Soldering (with 1.5-mm-bit)
Lötbad-
temperatur
Maximal
zulässige
Lötzeit
Abstand
Lötstelle –
Gehäuse
Temperatur
des Kolbens
Maximale
zulässige
Lötzeit
Abstand
Lötstelle –
Gehäuse
Temperature
of the
Soldering
Bath
Max. Perm.
Soldering
Time
Distance
between
Solder Joint
and Case
Temperature
of the
Soldering Iron Soldering
Time
Max.
Permissible
Distance
between
Solder Joint
and Case
260 °C
10 s
≥ 1.5 mm
300 °C
3 s
≥ 1.5 mm
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-03-09
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