SFH-4511 [OSRAM]
GaAs-LED mit sehr hohem Wirkungsgrad;
| 型号： | SFH-4511 |
| 厂家： | 
OSRAM GMBH |
| 描述： | GaAs-LED mit sehr hohem Wirkungsgrad |
| 文件： | 总8页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
Lead (Pb) Free Product - RoHS Compliant
SFH 4511
Wesentliche Merkmale
Features
• GaAs-LED mit sehr hohem Wirkungsgrad
• 5mm Kunststoffgehäuse
• Very highly efficient GaAs-LED
• 5mm plastic package
• Peakwellenlänge 950 nm
• Sehr enger Abstrahlwinkel (± 4°)
• Hohe Strahlstärke
• Peak Wavelength 950 nm
• Very narrow radiation Angle (± 4 Deg.)
• High radiant intensity
• Hohe Zuverlässigkeit
• High reliability
Anwendungen
Applications
• IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern
• Gerätefernsteuerungen für Gleich- und
Wechsellichtbetrieb
• IR remote control of hi-fi and TV-sets, video
tape recorders, dimmers
• Remote control for steady and varying intensity
• Sensor technology
• Discrete interrupters
• Sensorik
• Diskrete Lichtschranken
Typ
Type
Bestellnummer
Ordering Code
Strahlstärkegruppierung 1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping 1)
Ie (mW/sr)
SFH 4511
Q62702Q5557
> 63 (typ. 150)
1) gemessen bei einem Raumwinkel Ω = 0.001 sr / measured at a solid angle of Ω = 0.001 sr
2008-08-18
1
SFH 4511
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Top; Tstg
– 40 … + 100
°C
Operating and storage temperature range
Sperrspannung
Reverse voltage
VR
5
V
Durchlassstrom
Forward current
IF
100
3
mA
A
Stoßstrom, tp = 10 µs, D = 0
Surge current
IFSM
Ptot
Verlustleistung
Power dissipation
165
450
mW
K/W
Wärmewiderstand
Thermal resistance
RthJA
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak
950
nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
∆λ
55
nm
Abstrahlwinkel
Half angle
ϕ
± 4
Grad
deg.
Aktive Chipfläche
Active chip area
0.09
mm2
mm²
µs
A
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
0.3 × 0.3
0.5
Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
2008-08-18
2
SFH 4511
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Kapazität,
Co
25
pF
Capacitance
VR = 0 V, f = 1 MHz
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.3 (≤ 1.5)
2.3 (≤ 2.8)
V
V
Sperrstrom
Reverse current
VR = 5 V
IR
0.01 (≤ 1)
µA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe
22
mW
mW/sr
%/K
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ
1200
.
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
TCI
– 0.5
Temperature coefficient of Ie or Φe,
IF = 100 mA
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV
TCλ
– 2
mV/K
nm/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
+ 0.3
2008-08-18
3
SFH 4511
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.001 sr
Grouping of Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.001 sr
Bezeichnung
Parameter
Symbol
Wert
Value
Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
63
150
mW/sr
mW/sr
.
Ie typ
.
Strahlstärke
Radiant intensity
IF = 1 A,
Ie typ
1200
mW/sr
.
tp = 100 µs
2008-08-18
4
SFH 4511
Ιe
= f (IF)
Relative Spectral Emission
Irel = f (λ)
Radiant Intensity
Max. Permissible Forward Current
IF = f (TA)
Ιe 100 mA
Single pulse, tp = 20 µs
OHRD1938
OHR01551
102
OHR00883
100
%
120
A
mA
Ι e
Ι F
Ι rel
Ι e 100 mA
100
80
101
80
60
40
20
0
RthjA = 450 K/W
100
10-1
10-2
60
40
20
0
0
20
40
60
80
100 ˚C 120
10-3
10-2
10-1
100
Ι F
A
101
880
920
960
1000
nm
λ
1060
TA
Forward Current
Radiation Characteristics,
IF = f (VF), single pulse, tp = 20 µs
Ιrel = f (ϕ)
OHR01554
10 1
OHF01142
40˚
30˚
20˚
10˚
0˚
1.0
A
Ι F
50˚
10 0
10 -1
10 -2
10 -3
0.8
0.6
0.4
60˚
70˚
0.2
0
80˚
90˚
100˚
0
1
2
3
4
5
6
V
8
1.0
0.8
0.6
0.4
0˚
20˚
40˚
60˚
80˚
100˚
120˚
VF
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C
duty cycle D = parameter
10 4
OHR00860
t p
mA
5
Ι F
t p
T
Ι F
D
=
D
0.005
0.01
=
T
0.02
0.05
10 3
5
0.1
0.2
0.5
DC
10 2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2
t p
2008-08-18
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SFH 4511
Maßzeichnung
Package Outlines
9.0 (0.354)
8.2 (0.323)
7.8 (0.307)
7.5 (0.295)
5.9 (0.232)
5.5 (0.217)
Area not flat
0.6 (0.024)
0.4 (0.016)
1.8 (0.071)
1.2 (0.047)
0.6 (0.024)
0.4 (0.016)
5.7 (0.224)
5.1 (0.201)
29 (1.142)
27 (1.063)
Chip position
Cathode
GEXY6051
Maße in mm (inch) / Dimensions in mm (inch).
Package
Colour
5 mm radial (T 1 3/4)
black
2008-08-18
6
SFH 4511
Empfohlenes Lötpaddesign
Recommended Solder Pad
Wellenlöten (TTW)
TTW Soldering
4 (0.157)
OHLPY985
Maße in mm (inch) / Dimensions in mm (inch).
2008-08-18
7
SFH 4511
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
C
10 s
Normalkurve
standard curve
250
200
150
100
50
T
235 C ... 260 C
Grenzkurven
limit curves
2. Welle
2. wave
1. Welle
1. wave
ca 200 K/s
2 K/s
5 K/s
100 C ... 130 C
Zwangskühlung
forced cooling
2 K/s
0
0
50
100
150
200
s
250
t
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2008-08-18
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