NVMFWS0D5N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 414 A, 0.52mΩ;型号: | NVMFWS0D5N04XMT1G |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET 40 V, 414 A, 0.52mΩ |
文件: | 总7页 (文件大小:227K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8-FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
0.52 mW @ 10 V
414 A
D (5)
40 V, 0.52 mW, 414 A
NVMFWS0D5N04XM
G (4)
Features
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
S (1,2,3)
N−CHANNEL MOSFET
• Small Footprint (5 x 6 mm) with Compact Design
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
DFNW5 (SO−8FL WF)
CASE 507BD
MARKING DIAGRAM
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
S
S
G
D
D
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
0D5N4W
AYWZZ
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D
Continuous Drain Current
T
T
T
T
= 25°C
= 100°C
= 25°C
= 25°C,
I
D
414
293
163
900
900
A
C
C
C
C
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
Power Dissipation
P
D
W
A
Pulsed Drain Current
I
DM
t = 10 ms
p
Pulsed Source Current (Body
Diode)
I
SM
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
STG
Source Current (Body Diode)
I
S
251
A
Single Pulse Avalanche
Energy
I
PK
= 28.2 A
E
AS
1434
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NVMFWS0D5N04XM/D
February, 2023 − Rev. 4
NVMFWS0D5N04XM
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.92
Unit
Thermal Resistance, Junction−to−Case (Note 2)
R
°C/W
q
JC
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)
R
38.9
q
JA
2
1. Surface−mounted on FR4 board using 650 mm pad, 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25°C
40
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
I
D
= 1 mA, Referenced to 25°C
15
mV/°C
(BR)DSS
/DT
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
1
mA
DSS
J
V
DS
= 40 V, T = 125°C
60
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 20 V, V = 0 V
100
nA
GSS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 50 A, T = 25°C
0.43
3.0
0.52
3.5
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 240 mA, T = 25°C
2.5
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
DV
V
GS
= V , I = 240 mA
−7.21
mV/°C
GS(TH)
DS
D
/DT
J
Forward Trans−conductance
g
FS
V
DS
= 5 V, I = 50 A
267
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 25 V, V = 0 V, f = 1 MHz
6232
3987
53.9
60.5
97.9
18.2
27.4
18.5
0.47
pF
ISS
DS
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
Q
V
= 32 V, I = 50 A, V = 6 V
nC
G(TOT)
G(TOT)
DD
D
GS
Total Gate Charge
V
DD
= 32 V, I = 50 A, V = 10 V
D
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
Resistive Load, V = 0/10 V,
8.64
7.02
13.7
6.85
ns
d(ON)
GS
V
= 32 V, I = 50 A, R = 0 W
DD
D G
t
r
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
= 50 A, V = 0 V, T = 25°C
0.8
0.65
101
56.9
44.8
286
1.2
V
SD
S
GS
J
I
S
= 50 A, V = 0 V, T = 125°C
GS J
Reverse Recovery Time
Charge Time
t
V
= 0 V, I = 50 A,
ns
RR
GS
S
dI/dt = 100 A/ms, V = 32 V
DD
t
t
a
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
NVMFWS0D5N04XM
TYPICAL CHARACTERISTICS
1000
800
600
400
200
0
1000
V
GS=4.5V
T
VDS =5V
J=25°C
VGS=5V
VGS=5.5V
VGS=6V
900
800
700
600
500
400
300
200
100
0
VGS=7V
V
GS=8V
VGS=9V
=10V
V
GS
T
J=−55°C
T
J=25°C
T
J=175°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
7
VDS ,Drain to Source Voltage(V)
VGS,Gate to Source Voltage(V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
0.5
0.45
0.4
T
J=25°C
ID=50A
T
J=25°C
T
J=175°C
7
6
5
4
3
2
1
0
0.35
0.3
V
GS=10V
V
GS=12V
4
5
6
7
8
9
10
0
100 200 300 400 500 600 700 800 900 1000
ID,Drain Current(A)
VGS,Gate to Source Voltage(V)
Figure 4. On−Resistance vs. Drain Current
Figure 3. On−Resistance vs. Gate Voltage
2
1.0e−03
1.0e−04
1.0e−05
1.0e−06
1.0e−07
1.0e−08
I
D=50A
VGS = 0 V
VGS=10V
1.8
1.6
1.4
1.2
1
TJ = 25°C
TJ = 85°C
TJ = 125°C
T
T
= 150°C
= 175°C
J
J
1.0e−09
1.0e−10
0.8
0.6
5
10
15
20
25
30
35
40
−75 −50 −25
0
T
25
50
75 100 125 150 175
J,Junction Temperature(°C)
VDS, Drain to Source Voltage (V)
Figure 6. Drain Leakage vs. Drain to Source
Voltage
Figure 5. Normalized ON Resistance vs. Junction
Temperature
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3
NVMFWS0D5N04XM
TYPICAL CHARACTERISTICS (continued)
100000
10000
1000
100
10
VGS=0V
ID=50A
T
J=25°C
f=1MHz
8
6
4
2
0
VDD=8V
=24V
CISS
COSS
CRSS
V
DD
VDD=32V
10
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
VDS,Drain to Source Voltage(V)
QG,Gate Charge(nC)
Figure 8. Gate Charge Characteristics
Figure 7. Capacitance Characteristics
1e−06
1e−07
1e−08
1000
100
10
VGS=10V
VDS=32V
ID=50A
VGS=0V
1
td(on)
td(off)
tr
0.1
0.01
=175°C
=25°C
TJ
TJ
=−55°C
tf
TJ
1e−09
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
RG,Gate Resistance(Ohm)
VSD,Body Diode Forward Voltage(V)
Figure 10. Diode Forward Characteristics
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
TJ = 25°C
TJ = 100°C
1000
100
10
1
TC = 25°C
TJ = 175°C
Single Pulse
Ron limit
Package limit
BV limit
Pulse Duration = 0.5 ms
Pulse Duration = 1 ms
Pulse Duration = 10 ms
10
0.1
1e−04
1e−03
1e−02
0.1
1
10
tAV, Time in Avalanche (s)
VDS, Drain to Source Voltage (V)
Figure 12. Ipeak vs. Time in Avalanche
Figure 11. Maximum Rated Forward Biased Safe
Operating Area
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4
NVMFWS0D5N04XM
TYPICAL CHARACTERISTICS (continued)
1.2
1.1
1
0.9
0.8
0.7
0.6
−75 −50 −25
0
25
50
75
100 125 150 175
TJ, Junction Temperature(°C)
Figure 13. Gate Threshold Voltage vs. Junction Temperature
100
10
D = 0 is Single Pulse
1
0.1
D = 0.00
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Notes:
= P
P
DM
0.01
0.001
T
x Z
(t) + T
qJA A
JM
DM
t
1
Duty Cycle, D = t /t
2
1
t
2
1e−06
1e−05
1e−04
1e−02
1e−01
1e+00
1e+01
1e+02
1e+03
1e−03
t, Rectangular Pulse Duration (s)
Figure 14. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS0D5N04XMT1G
0D5N4W
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW5 5x6, FULL−CUT SO8FL WF
CASE 507BD
ISSUE O
DATE 13 APR 2021
q
q
GENERIC
MARKING DIAGRAM*
XXXXXX
AYWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Assembly Lot
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON31027H
DFNW5 5x6, FULL−CUT SO8FL WF
PAGE 1 OF 1
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