NVMFWS0D63N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 384 A, 0.6 mΩ;型号: | NVMFWS0D63N04XMT1G |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET 40 V, 384 A, 0.6 mΩ |
文件: | 总7页 (文件大小:167K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
0.6 mꢂ @ V = 10 V
384 A
GS
N−CHANNEL MOSFET
40 V, 0.6 mW, 384 A
D (5)
NVMFWS0D63N04XM
G (4)
MAXIMUM RATINGS (T = 25C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
S (1,2,3)
V
DSS
Gate−to−Source Voltage
DC
V
20
384
271
157
60
V
GS
Continuous Drain Current
T
C
T
C
T
C
T
C
T
C
T
C
= 25C
= 100C
= 25C
= 25C
= 100C
= 25C,
I
A
D
Power Dissipation
P
W
A
D
DFNW5 (SO−8FL)
CASE 507BA
Continuous Drain Current
R
I
D
ꢀ
JA
42
Pulsed Drain Current
I
900
A
DM
MARKING DIAGRAM
t = 10 ꢁ s
p
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
C
J
STG
S
S
S
G
D
D
175
063N4W
AYWZZ
Source Current (Body Diode)
I
S
131
585
A
Single Pulse Avalanche
Energy
I
PK
= 26.5 A
E
AS
mJ
D
063N4W= Specific Device Code
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260
C
A
= Assembly Location
= Year
Y
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
ZZ
= Work Week
= Lot Traceability
THERMAL CHARACTERISTICS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
(Note 2)
R
0.95
C/W
ꢀ
JC
Thermal Resistance, Junction−to−Ambient
(Notes 1, 2)
R
39
ꢀ
JA
2
1. Surface mounted on FR4 board using 650 mm , 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVMFWS0D63N04XM/D
May, 2023 − Rev. 0
NVMFWS0D63N04XM
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25C
40
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
ꢃ
V
/
I
D
= 1 mA, Referenced to 25C
15
mV/C
(BR)DSS
ꢃ
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25C
10
ꢁ
A
DSS
J
V
= 40 V, T = 125C
100
100
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 20 V, V = 0 V
nA
GSS
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 30 A, T = 25C
0.54
0.6
3.5
mꢂ
DS(on)
GS
D
J
V
V
GS
= V , I = 230 ꢁ A, T = 25C
2.5
V
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
ꢃ V
/
V
GS
= V , I = 230 ꢁ A
−7.24
mV/C
GS(TH)
DS
D
ꢃ
T
J
Forward Trans−conductance
g
FS
V
DS
= 5 V, I = 30 A
174
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 25 V, V = 0 V, f = 1 MHz
5862
3760
50
pF
nC
ISS
DS
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
V
DD
= 32 V, I = 50 A, V = 10 V
92.2
17.2
25.8
17.4
0.60
G(TOT)
D
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
ꢂ
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
Resistive Load,
= 0/10 V, V = 32 V,
28
9
ns
d(ON)
V
GS
I
DD
t
r
= 50 A, R = 0 ꢂ
D
G
Turn−Off Delay Time
Fall Time
t
47
7.3
d(OFF)
t
f
SOURCE TO DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
= 30 A, V = 0 V, T = 25C
0.78
0.63
83
V
SD
S
GS
J
I
S
= 30 A, V = 0 V, T = 125C
GS J
Reverse Recovery Time
Charge Time
t
V
= 0 V, I = 50 A,
ns
RR
GS
S
dI/dt = 100 A/ꢁ s, V = 32 V
DD
t
t
47
a
Discharge Time
36
b
Reverse Recovery Charge
Q
246
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFWS0D63N04XM
TYPICAL CHARACTERISTICS
900
800
700
600
500
400
300
200
100
0
900
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=8V
VGS=9V
VGS=10V
T
VDS=5V
J=25_C
800
700
600
500
400
300
200
100
0
T
J=−55_C
T
J=25_C
T
J=175_C
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
1
0.8
0.6
0.4
0.2
0
T
J=25_C
ID=30A
TJ=25_C
T
J=175_C
7
6
5
4
3
2
1
0
VGS=10V
300 350
4
5
6
7
8
9
10
50
100
150
200
250
400
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
1.00E+06
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E−01
1.8
1.6
1.4
1.2
1
ID=30A
VGS=10V
TJ=25C
TJ=85C
TJ= 125C
TJ= 150C
TJ= 175C
0.8
0.6
−75 −50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T
VDS, Drain to Source Voltage (V)
J, Junction Temperature (_C)
Figure 5. Normalized On−Resistance vs.
Figure 6. Drain−to−Source Leakage Current
Junction Temperature
vs. Drain Voltage
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3
NVMFWS0D63N04XM
TYPICAL CHARACTERISTICS (continued)
100000
10000
1000
100
10
VGS=0V
ID=50A
T
J=25_C
f=1MHz
8
6
4
2
0
C
VDD=8V
VDD=24V
VDD=32V
ISS
OSS
RSS
C
C
10
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1e−06
1e−07
1e−08
1e−09
1000
100
10
VGS=10V
VDS=32V
ID=50A
VGS=0V
1
td(on)
0.1
0.01
td(off)
T
J=175_C
t
T
J=25_C
r
t
T
J=−55_C
f
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
R
VSD, Body Diode Forward Voltage (V)
G, Gate Resistance ()
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
1
=25°C
TC
Single Pulse
VGS 10 V
1
pulseDuration=0.5ms
pulseDuration=1ms
pulseDuration=10ms
T
J=25°C
T
J=150°C
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
VDS, Drain to Source Voltage (V)
tAV,Time in Avalanche (sec)
Figure 11. Safe Operating Area (SOA)
Figure 12. Avalanche Current vs. Pulse Time
(UIS)
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4
NVMFWS0D63N04XM
TYPICAL CHARACTERISTICS (continued)
100
10
50%Duty Cycle
20% Duty Cycle
10% Duty Cycle
5% Duty Cycle
2% Duty Cycle
1% Duty Cycle
Single Pulse
1
0.1
Z
Notes:
P
DM
T
=PDMxZJA((tt))++TT
JM
A
t
1
Duty Cycle,D=t1//tt2
t
2
0.01
0.000001
0.0001
0.001
t, Rectangular Pulse Duration (sec)
10
0.00001
0.01
0.1
1
1000
100
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Device
†
Marking
Package
DFNW5
Shipping
NVMFWS0D63N04XMT1G
063N4W
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFWS0D63N04XM
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
ꢀ
ꢀ
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6
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