NVMFWS2D9N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 94 A, 3.1mΩ;
| 型号： | NVMFWS2D9N04XMT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 40 V, 94 A, 3.1mΩ |
| 文件： | 总7页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single
N-Channel, STD Gate,
SO8FL
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
40 V
3.1 mW @ 10 V
94 A
40 V, 3.1 mW, 94 A
D (5)
NVMFWS2D9N04XM
G (4)
Features
• Low R
to Minimize Conduction Losses
DS(on)
S (1,2,3)
N−CHANNEL MOSFET
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5 x 6 mm) with Compact Design
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
D
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
S
S
S
G
D
D
DFN5
(SO8FL WF)
CASE 507BA
2D9N4W
AYWZZ
D
2D9N4W = Specific Device code
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
A
Y
= Assembly Location
= Year
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
W
ZZ
= Work Week
= Lot Traceability
V
DSS
Gate−to−Source Voltage
DC
V
GS
20
V
Continuous Drain
Current
T
= 25°C
= 100°C
= 25°C
I
94
A
C
D
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Steady
State
T
C
66
Power Dissipation
T
C
P
50
W
A
D
Continuous Drain
Current R
T = 25°C
A
I
D
25
Steady
State
q
JA
T = 100°C
A
18
Pulsed Drain Current
T = 25°C,
p
I
440
A
A
DM
t = 10 ms
Operating Junction and Storage Temperature
Range
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
I
S
42
A
Single Pulse Drain−to−Source Avalanche
E
AS
133
mJ
Energy (I
= 4.6 A)
L(pk)
Lead Temperature Soldering Reflow for
Soldering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVMFWS2D9N04XM/D
April, 2023 − Rev. 3
NVMFWS2D9N04XM
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction−to−Case (Note 2)
Symbol
Value
3
Unit
°C/W
R
q
JC
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)
R
41.6
q
JA
2
1. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25°C
40
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
I
D
= 1 mA, Referenced to 25°C
15
mV/°C
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
10
mA
DSS
J
V
= 40 V, T = 125°C
100
100
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 20 A, T = 25°C
2.7
3.1
3.5
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 40 mA, T = 25°C
2.5
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
DV
/
V
GS
= V , I = 40 mA
−7.2
mV/°C
GS(TH)
DS
D
DT
J
Forward Transconductance
CHARGES & CAPACITANCES
Input Capacitance
g
V
= 5 V, I = 20 A
79.6
S
FS
DS
D
C
V
= 25 V, V = 0 V, f = 1 MHz
1000
645
12.3
15.7
2.9
4.8
3
pF
ISS
DS
GS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
DD
= 32 V, I = 50 A, V = 10 V
nC
G(TOT)
D
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
1
W
G
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
Resistive Load, V = 0/10 V,
13.1
4.5
ns
d(ON)
GS
V
= 32 V, I = 50 A, R = 0 W
DD
D G
Rise Time
t
r
Turn−Off Delay Time
t
19.8
3.8
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 20 A, T = 25°C
0.84
0.7
107
38
1.2
V
SD
GS
S
J
V
GS
= 0 V, I = 20 A, T = 125°C
S J
Reverse Recovery Time
Charge Time
t
V
= 0 V, I = 50 A,
ns
ns
ns
nC
RR
GS
S
di/dt = 100 A/ms, V = 32 V
DD
t
t
a
Discharge Time
69
b
Reverse Recovery Time
Q
391
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
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2
NVMFWS2D9N04XM
TYPICAL CHARACTERISTICS
200
150
100
50
200
VGS=4.5V
VGS=5V
T
VDS=5V
J=25°C
180
160
140
120
100
80
VGS=5.5V
V
GS=6V
V
GS=7V
VGS=8V
VGS=9V
V
=10V
GS
60
40
T
J=−55°C
20
T
J=25°C
T
J=175°C
0
0
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
18
16
14
12
10
8
5
T
J=25°C
ID=20A
T
J=25°C
T
J=175°C
4
3
2
1
0
6
4
VGS=10V
2
4
5
6
7
8
9
10
0
50
100
150
200
250
300
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
100K
10K
1K
2
1.8
1.6
1.4
1.2
1
I
D=20A
VGS=10V
100
10
TJ=25C
TJ=85C
TJ= 125C
TJ= 150C
TJ= 175C
1
0.8
0.6
0.1
5
10
15
20
25
30
35
40
−75 −50 −25
0
25
50
75 100 125 150 175
VDS, Drain to Source Voltage (V)
T
J, Junction Temperature (°C)
Figure 5. Normalized ON Resistance vs.
Junction Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFWS2D9N04XM
TYPICAL CHARACTERISTICS
10
10000
1000
100
10
ID=50A
VGS=0V
T
J=25°C
f=1MHz
8
6
4
2
0
V
DD
DD=8V
CISS
COSS
CRSS
V
=24V
=32V
V
DD
1
0
2
4
6
8
10
12
14
16
18
0
5
10
15
20
25
30
35
40
QG, Gate Charge (nC)
VDS, Drain to Source Voltage (V)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
100
10
1e−06
1e−07
1e−08
1e−09
VGS=0V
VGS=10V
VDS=32V
ID=50A
1
td(on)
td(off)
tr
0.1
0.01
T
J=175°C
T
J=25°C
T
tf
J=−55°C
0
0.2
0.4
0.6
0.8
1
1.2
1
10
G, Gate Resistance (W)
100
VSD, Body Diode Forward Voltage (V)
R
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Characteristics
1000
100
10
100
TC=25°C
Single Pulse
10
VGS ≤ 10 V
1
1
T Initial
=25°C
J
T
Initial
pulseDuration=0.5ms
pulseDuration=1ms
pulseDuration=10ms
=150°C
J
0.1
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
tAV ,Time in Avalanche (sec)
VDS, Drain to Source Voltage (V)
Figure 11. Safe Operating Area (SOA)
Figure 12. Ipeak vs. Time in Avalanche
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4
NVMFWS2D9N04XM
TYPICAL CHARACTERISTICS
100
10
1
@50% Duty Cycle
@20% Duty Cycle
@10% Duty Cycle
@5% Duty Cycle
@2% Duty Cycle
@1% Duty Cycle
Single Pulse
Notes:
P
DM
0.1
T
=PDMxZθJA(t)+T
JM
A
t
1
Duty Cycle,D=t1/t2
t
2
0.01
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
t, Rectangular Pulse Duration (sec)
Figure 13. Transient Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS2D9N04XMT1G
2D9N4W
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFWS2D9N04XM
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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6
NVMFWS2D9N04XM
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