NVMFWS0D6N04XMT1G [ONSEMI]
Single N-Channel Power MOSFET 40 V, 369 A, 0.6 mΩ;型号: | NVMFWS0D6N04XMT1G |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET 40 V, 369 A, 0.6 mΩ |
文件: | 总7页 (文件大小:148K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, STD Gate,
SO8-FL
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
40 V
0.57 mW @ 10 V
380 A
D (5)
40 V, 0.57 mW, 380 A
NVMFWS0D6N04XM
Features
G (4)
• Low R
to Minimize Conduction Losses
DS(on)
S (1,2,3)
• Low Capacitance to Minimize Driver Losses
• Small Footprint (5x6 mm) with Compact Design
• AEC−Q101 Qualified and PPAP Capable
N−CHANNEL MOSFET
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drive
• Battery Protection
• Synchronous Rectification
DFNW5 (SO−8FL WF)
CASE 507BD
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
D
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
S
S
S
G
D
D
V
DSS
0D6N4W
AYWZZ
Gate−to−Source Voltage
DC
V
GS
20
V
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
= 25°C,
I
380
268
150
61
A
C
D
D
T
C
0D6N4W = Specific Device Code
Power Dissipation
T
T
P
W
A
C
D
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
Continuous Drain Current
R
I
DA
C
q
JA
T
C
43
= Assembly Lot Code
Pulsed Drain Current
T
I
900
A
C
p
DM
t = 10 ms
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
STG
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
+175
Source Current (Body Diode)
I
S
125
562
260
A
Single Pulse Avalanche Energy (I = 24.9 A)
E
AS
mJ
°C
PK
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
NVMFWS0D6N04XM/D
April, 2023 − Rev. 0
NVMFWS0D6N04XM
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1
Unit
Thermal Resistance, Junction−to−Case (Note 2)
R
°C/W
q
JC
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)
R
38.8
q
JA
2
1. Surface−mounted on FR4 board using 650 mm , 2 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA, T = 25°C
40
V
(BR)DSS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
I
D
= 1 mA, Referenced to 25°C
15
mV/°C
(BR)DSS
DT
J
Zero Gate Voltage Drain Current
I
V
DS
= 40 V, T = 25°C
10
mA
DSS
J
V
= 40 V, T = 125°C
100
100
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 20 V, V = 0 V
nA
GSS
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
V
= 10 V, I = 30 A, T = 25°C
0.51
0.57
3.5
mW
V
DS(ON)
GS
D
J
V
GS
= V , I = 210 mA, T = 25°C
2.5
GS(TH)
DS
D
J
Gate Threshold Voltage Temperature
Coefficient
DV
/
V
GS
= V , I = 210 mA
−7.26
mV/°C
GS(TH)
DS
D
DT
J
Forward Trans−conductance
g
FS
V
DS
= 5 V, I = 30 A
175
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 25 V, V = 0 V, f = 1 MHz
5543
3481
50
pF
ISS
DS
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
V
DD
= 32 V, I = 50 A, V = 10 V
87
nC
G(TOT)
D
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
16.2
24.4
16.3
0.56
G(TH)
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
Resistive Load, V = 0/10 V,
32.8
15.7
61.5
17
ns
d(ON)
GS
V
= 32 V, I = 50 A, R = 0 W
DD
D G
t
r
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
I
= 30 A, V = 0 V, T = 25°C
0.78
0.63
116
46
1.2
V
SD
S
GS
J
I
S
= 30 A, V = 0 V, T = 125°C
GS J
Reverse Recovery Time
Charge Time
t
V
= 0 V, I = 50 A,
ns
RR
GS
S
dI/dt = 100 A/ms, V = 32 V
DD
t
t
a
Discharge Time
70
b
Reverse Recovery Charge
Q
254
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVMFWS0D6N04XM
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
100
0
800
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=8V
VGS=9V
VGS=10V
VDS=5V
T
J=25°C
700
600
500
400
300
200
100
0
T
J=−55°C
T
J=25°C
T
J=175°C
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
7
VDS , Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
0.8
0.7
0.6
0.5
0.4
T
J=25°C
ID=30A
T
J=25°C
T
J=175°C
7
6
5
4
3
2
1
0
0.3
0.2
VGS=10V
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350
400
VGS, Gate to Source Voltage (V)
ID , Drain Current (A)
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
2
1000000
100000
10000
1000
I
D=30A
VGS=0V
VGS=10V
1.8
1.6
1.4
1.2
1
100
10
TJ=25C
TJ=85C
TJ= 125C
TJ= 150C
TJ= 175C
0.8
0.6
1
0.1
−75 −50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T
VDS, Drain to Source Voltage (V)
J, Junction Temperature (°C)
Figure 5. Normalized ON Resistance vs.
Junction Temperature
Figure 6. Drain to Source Voltage vs Drain
Leakage
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3
NVMFWS0D6N04XM
TYPICAL CHARACTERISTICS (Continued)
100000
10000
1000
100
10
VGS=0V
ID=50A
T
J=25°C
f=1MHz
8
6
4
2
0
VDD=8V
=24V
CISS
COSS
CRSS
V
DD
VDD=32V
10
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80 90 100
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1e−06
1e−07
1000
100
10
VGS=10V
VDS=32V
ID=50A
VGS=0V
1
td(on)
td(off)
tr
0.1
0.01
T
J=175°C
T
J=25°C
tf
T
J=−55°C
1e−08
1
10
G, Gate Resistance (W)
100
0
0.2
0.4
0.6
0.8
1
1.2
R
VSD, Body Diode Forward Voltage (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Characteristics
100
1000
100
10
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
10
R
Limit
DS(on)
Thermal Limit
Package Limit
1
T
J(initial)=25°C
pulseDuration=0.5ms
pulseDuration=1ms
pulseDuration=10ms
T
J(initial) =150°C
1
0.1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
VDS, Drain to Source Voltage (V)
tAV ,Time in Avalanche (sec)
Figure 11. Safe Operating Area (SOA)
Figure 12. Avalanche Current vs. Pulse Time
(UIS)
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4
NVMFWS0D6N04XM
TYPICAL CHARACTERISTICS (Continued)
100
10
D=0 is Single Pulse
@50% Duty Cycle
@20% Duty Cycle
@10% Duty Cycle
@5% Duty Cycle
@2% Duty Cycle
@1% Duty Cycle
Single Pulse
1
0.1
Notes:
= P
P
DM
T
x Z
(t) + T
qJA A
JM
DM
t
1
Duty Cycle, D = t /t
2
1
t
2
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Time (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFWS0D6N04XMT1G
0D6N4W
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFWS0D6N04XM
PACKAGE DIMENSIONS
DFNW5 5x6, FULL−CUT SO8FL WF
CASE 507BD
ISSUE O
q
q
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6
NVMFWS0D6N04XM
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