NVC6S5A444NLZT1G [ONSEMI]
功率 MOSFET，60 V，78 mΩ，4.5 A，单 N 沟道;
| 型号： | NVC6S5A444NLZT1G |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，60 V，78 mΩ，4.5 A，单 N 沟道 |
| 文件： | 总7页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NVC6S5A444NLZ
Power MOSFET
60 V, 78 mW, 4.5 A, N−Channel
Automotive Power MOSFET designed to minimize gate charge and
low on resistance. AEC−Q101 qualified MOSFET and PPAP capable
suitable for automotive applications.
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Features
• 4.5 V Drive
• High ESD Protection
V
R
(on) MAX
I MAX
D
DSS
DS
• Low On−Resistance
78 mW @ 10 V
• CPH6 Package is Pin−Compatible with SOT−26
• Pb−Free, Halogen Free and RoHS Compliance
60 V
4.5 A
120 mW @ 4.5 V
Typical Applications
• Load Switch
• Motor Drive
ELECTRICAL CONNECTION
N−Channel
1, 2, 5, 6
Specifications
ABSOLUTE MAXIMUM RATINGS (T = 25°C)
a
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
Parameter
Drain to Source Voltage
Gate to Source Voltage
Symbol
Value
60
Unit
V
3
V
DSS
V
GSS
20
V
Drain Current (DC) (Note 1)
Drain Current (DC) (Note 2)
I
D
4.5
3.5
18
A
4
A
Drain Current (Pulse)
PW ≤ 10 ms, duty cycle ≤ 1%
I
A
DP
MARKING
DIAGRAM
Power Dissipation
Ta = 25°C (Note 1)
P
1.9
0.97
W
W
°C
D
6
5
4
Power Dissipation
Ta = 25°C (Note 2)
1
2
3
CPH6
Junction Temperature and
Storage Temperature
Tj, Tstg
−55 to +175
CASE 318BD
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction to Ambient
Symbol
Value
78.1
153
Unit
°C/W
°C/W
(Note 1)
(Note 2)
R
q
JA
2
1. Surface mounted on ceramic substrate (900 mm × 0.8 mm).
2
2. Surface mounted on FR4 board using a 92 mm , 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2018 − Rev. 0
NVC6S5A444NLZ/D
NVC6S5A444NLZ
ELECTRICAL CHARACTERISTICS (T = 25°C)
a
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
V
60
−
−
V
I
= 1 mA, V = 0 V
Drain to Source Breakdown Voltage
Zero−Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
(BR)DSS
D
GS
−
−
−
−
−
I
V
= 60 V, V = 0 V
μA
μA
V
1.0
10
DSS
DS
GS
V
GS
=
16 V, V = 0 V
I
DS
GSS
1.2
V
GS
(th)
V
= 10 V, I = 1 mA
2.6
−
DS
D
g
FS
V
= 10 V, I = 2 A
Forward Transconductance
−
−
−
3.0
60
84
S
DS
D
Static Drain to Source On−State Resistance
R
(on)
I
= 2 A, V = 10 V
78
120
−
mW
mW
DS
D
GS
I
D
= 1 A, V = 4.5 V
GS
V
= 20 V, f = 1 MHz
Input Capacitance
Ciss
−
−
−
−
−
−
−
−
−
−
−
505
57
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
−
−
−
−
−
−
−
−
−
Output Capacitance
Reverse Transfer Capacitance
Turn−ON Delay Time
Rise Time
Coss
Crss
37
See Figure 1
t (on)
d
7.3
9.8
40
t
r
t (off)
d
Turn−OFF Delay Time
Fall Time
t
f
24
V
DS
= 30 V, V = 10 V, I = 4.5 A
GS D
Total Gate Charge
Qg
10
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
1.6
2.1
0.86
V
SD
I = 4.5 A, V = 0 V
S GS
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
V
DD
= 30 V
V
IN
10 V
0 V
I
D
= 2 A
R = 15 W
L
V
IN
V
OUT
D
PW = 10 ms
D.C. ≤ 1%
G
NVC6S5A444NLZ
P.G
50 W
S
Figure 1. Switching Time Test Circuit
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2
NVC6S5A444NLZ
TYPICAL CHARACTERISTICS
6
5
4
3
2
1
0
10
4 V
4.5 V
10 V
VDS = 10 V
Single Pulse
9
8
7
6
5
4
3
2
1
0
3.5 V
7 V
25°C
VGS =3 V
−25°C
Ta = 75°C
Ta =25°C
Single Pulse
0
0.2
0.4
0.6
0.8
1
0
1
2
3
4
5
DRAIN TO SOURCE VOLTAGE, VDS − V
DRAIN TO SOURCE VOLTAGE, VGS − V
Figure 3. ID − VGS
Figure 2. ID − VDS
200
180
160
140
120
100
80
250
200
150
100
50
Single Pulse
Ta = 25°C
Single Pulse
2 A
ID = 1 A
60
40
20
0
0
−50 −25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
AMBIENT TEMPERATURE, Ta − °C
GATE TO SOURCE VOLTAGE, V − V
GS
Figure 4. RDS(on) − VGS
Figure 5. RDS(on) − Ta
10
10
1
VDS = 10 V
Single Pulse
VGS = 0 V
Single Pulse
1
0.1
0.1
0.01
0.01
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
DRAIN CURRENT, I − A
FORWARD DIODE VOLTAGE, V − V
D
SD
Figure 6. gFS − ID
Figure 7. IS − VSD
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3
NVC6S5A444NLZ
TYPICAL CHARACTERISTICS
100
1000
V
DD
V
GS
= 30 V
= 10 V
f = 1 MHz
Ciss
t (off)
d
t
f
10
100
t (on)
d
Coss
Crss
t
r
1
0.1
10
1
10
0
10
20
30
40
50
60
DRAIN CURRENT, I − A
DRAIN TO SOURCE VOLTAGE, V − V
D
DS
Figure 8. SW TIME − ID
Figure 9. Ciss, Coss, Crss − VDS
10
9
100
10
V
I
= 30 V
= 4.5 A
DD
1 ms
100 ms
I
= 18 A (PW ≤ 10 ms)
D
DP
8
7
I
D
= 3.5 A
10 ms
6
5
1
100 ms
Operation in this
area is limited by
4
R
3
DS(on)
0,1
0,01
DC Operation
(Ta = 25°C)
Ta = 25°C
Single Pulse
Surface mounted on FR4 board
using a 92 mm , 1 oz. Cu pad.
2
1
0
2
0
2
1
2
3
4
5
6
7
8
9
10
0,1
1
10
100
TOTAL GATE CHARGE, Qg − nC
DRAIN TO SOURCE VOLTAGE, V − V
DS
Figure 10. VGS − Qg
Figure 11. SOA
Surface mounted on ceramic substrate
(900 mm × 0.8 mm)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
Surface mounted on FR4 board
using a 92 mm , 1 oz. Cu pad.
2
0
25
50
75 100 125 150 175 200
AMBIENT TEMPERATURE, Ta − °C
Figure 12. PD − Ta
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4
NVC6S5A444NLZ
TYPICAL CHARACTERISTICS
1000
R
= 153°C/W
̊
q
JA
Duty Cycle = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.1
2
Surface mounted on FR4 board using a 92 mm , 1 oz. Cu pad.
0.01
100
1E−05
0.0001
0.001
0.01
0.1
1
10
1000
PULSE TIME, PT − s
Figure 13. RqJA − PULSE TIME
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVC6S5A444NLZT1G
NVC6S5A444NLZT2G
ZW
CPH6
3,000 / Tape & Reel
(Pb−Free / Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
Since the NVC6S5A444NLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
CPH6
CASE 318BD
ISSUE O
DATE 30 NOV 2011
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON65440E
CPH6
PAGE 1 OF 1
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