NVCR8LS025N65S3A [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 75 A, 25 mΩ, Bare Die;
| 型号： | NVCR8LS025N65S3A |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 75 A, 25 mΩ, Bare Die |
| 文件： | 总8页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIE DATA SHEET
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MOSFET – Power,
N-Channel, Automotive,
SUPERFET) III, Easy-Drive
650 V, 25 mW
NVCR8LS025N65S3A
Features
• Typical R
• Typical Q
= 19.9 mW at V = 10 V
GS
DS(on)
ORDERING INFORMATION
= 236 nC at V = 10 V
g(tot)
GS
Device
Package
• AEC−Q101 Qualified
• RoHS Compliant
NVCR8LS025N65S3A
Wafer Sawn on Foil
DIMENSION (mm)
Die Size
RECOMMENDED STORAGE CONDITIONS
10830 x 7610
Temperature
RH
22 to 28°C
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
10810 30 x 7590 30
(10155 x 3346) x 2
406 x 618
40% to 66%
203.2 25.4
Gate and Source : AlSiCu
Drain : Ti−NiV−Ag (back side of die)
Passivation : SiN
Wafer Diameter : 8 inch
Wafer sawn on UV Tape
Bad dice identified in Inking
Gross Die Count : 296
ELECTRICAL CHARACTERISTICS
The Chip is 100% Probed to Meet the Conditions and Limits Specified at T = 25°C
J
Symbol
Parameter
Condition
= 1 mA, V = 0 V
Min.
Typ.
−
Max.
−
Unit
V
BV
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
Drain to Source Diode Forward Voltage
I
650
−
DSS
D
GS
I
I
V
V
V
= 650 V, V = 0 V
−
1
mA
nA
V
DSS
GSS
DS
GS
GS
GS
= +30 / −20 V, V = 0 V
−
−
100
4.5
25
DS
V
= V , I = 3 mA
2.5
−
−
GS(th)
DS
D
*R
I
D
= 37.5 A, V = 10 V
19.9
mW
V
DS(on)
GS
V
V
= 0 V, I = 37.5 V
1.2
SD
GS
SD
*Accurate RDS(on) test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max RDS(on)
specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die RDS(on)
performance depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVCR8LS025N65S3A/D
September, 2022 − Rev. 0
NVCR8LS025N65S3A
ABSOLUTE MAXIMUM RATINGS
in Reference to the NVHL025N65S3 electrical data in TO−247−3LD ( T = 25°C unless otherwise noted)
J
Symbol
V
Parameter
Ratings
650
Unit
V
Drain to Source Voltage
Gate to Source Voltage
DSS
V
GS
DC Positive
30
V
AC Positive, (f > 1Hz)
30
V
AC Negative, (f > 1Hz)
−20
V
°
I
Continuous Drain Current
Pulsed Drain Current
T
T
= 25 C
75
A
D
C
C
°
= 100 C
65.8
300
A
I
Pulsed (Note 1)
A
DM
E
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche (Note 1)
MOSFET dv/dt
2025
5.95
100
mJ
mJ
V/ns
V/ns
W
AS
AR
E
dv/dt
Peak Diode Recovery dv/dt (Note 3)
20
°
P
Power Dissipation R
T
C
= 25 C
595
D
qJC
T
T
Operating and Storage Temperature
–55 to +150
°C
J, STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 15 A, R = 25 W, Starting T = 25°C.
AS
G
J
3. I < 75 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting T = 25°C
SD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
0.21
°C/W
R
q
J C
J A
40
°C/W
R
q
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2
NVCR8LS025N65S3A
ELECTRICAL CHARACTERISTICS
in Reference to the NVHL025N65S3 electrical data in TO−247−3LD ( T = 25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
I
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
I
= 1 mA, V = 0 V
650
−
−
−
−
1
V
DSS
D
GS
V
V
V
V
= 650 V, V = 0 V, T = 25°C
mA
mA
nA
nA
DSS
GSS
DS
DS
GS
GS
GS
J
= 520 V, V = 0 V, T = 125°C
−
7.92
−
−
GS
J
I
Gate to Source Leakage Current
= +30 V
−
+100
−100
= −20 V
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V I = 3.0 mA
DS, D
2.5
−
4.5
25
−
V
GS(th)
GS
R
Drain to Source On−Resistance
= 37.5 A,
T = 25°C
19.9
34.6
78.5
mW
mW
S
DS(on)
D
J
V
GS
= 10 V
T = 100°C
−
J
g
FS
Forward Transconductance
V
DS
= 20 V, I = 75 A
D
DYNAMIC CHARACTERISTICS
C
C
C
C
C
Input Capacitance
V
= 400 V, V = 0 V,
−
−
−
7330
197
−
−
−
pF
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
f = 1 MHz
Output Capacitance
oss
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge
33.6
2062
285
rss
V
DS
V
DS
V
GS
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
oss(er.)
= 0 V to 400 V, V = 0 V
GS
Q
Q
Q
= 10 V, V = 400 V I = 75 A
−
−
−
−
236
−
−
−
−
g(ToT)
gs
DS
, D
(Note 4)
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Resistance
59.3
97.3
0.818
gd
RG
f = 1 MHz
SWITCHING CHARACTERISTICS
t
t
t
t
Turn−On Delay Time
Rise Time
V
R
= 400 V, I = 75 A, V = 10 V,
= 2 W
−
−
−
−
43.3
109
120
107
−
−
−
−
ns
ns
ns
ns
d(on)
DD
D
GS
G
r
(Note 4)
Turn−Off Delay Time
Fall Time
d(off)
f
DRAIN*SOURCE DIODE CHARACTERISTICS
S
I
Maximum Continuous Drain to Source Diode Forward Current
75
300
1.2
−
A
A
V
I
Maximum Pulsed Drain to Source Diode Forward Current
SM
V
Source to Drain Diode Voltage
Reverse Recovery Time
V
V
= 0 V, I = 37.5 A, V = 0 V
−
−
−
SD
GS
SD
GS
t
rr
= 0 V, I = 75 A, dI /dt = 100 A/ms
714
ns
GS
SD
SD
−
Q
Reverse Recovery Charge
−
26.4
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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3
NVCR8LS025N65S3A
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
90
60
30
0
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
0
25
50
75
100
125
150
25
50
75
100
125
150
T , Case Temperature (°C)
C
T , Case Temperature (°C)
C
Figure 1. Normalized Power Dissipation vs. Case
Temperature
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
10
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
0.01
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P x Z
x R
+ T
J
DM
qJC
qJC C
0.001
10−5
10−4
10−3
10−2
10−1
100
t, Rectangular Pulse Duration (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
1000
o
T
= 25
C
C
VGS = 10 V
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
150 − T
C
I = I
25
125
100
SINGLE PULSE
10
10−5
10−4
10−3
10−2
10−1
100
101
t, Rectangular Pulse Duration (s)
Figure 4. Peak Current Capability
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4
NVCR8LS025N65S3A
TYPICAL CHARACTERISTICS (continued)
1000
100
10
30 us
100 us
1 ms
10 ms
DC
Operation in this area
may be limited by R
DS(on)
1
DC
Rds(on)−limit
10 us
Single Pulse
0.1
0.01
T = Max Rated
J
T
C
= 25°C
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
Figure 5. Forward Bias Safe Operating Area
1000
300
100
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
V
GS
= 0 V
V
DD
= 20 V
100
10
1
T = 150°C
J
10
1
T = 25°C
J
T = 25°C
J
T = 150°C
J
T = −55°C
J
0.1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Forward Diode Characteristics
Figure 6. Transfer Characteristic
200
100
80
60
40
20
0
250 μs Pulse Width
V
250 μs Pulse Width
T = 150°C
J
GS
T = 25°C
10 V Top
8 V
J
V
GS
150
100
50
10 V Top
8 V
7 V
6.5 V
6 V
7 V
6.5 V
6 V
5.5 V
5 V Bottom
5.5 V
5 V Bottom
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, Drain to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
Figure 8. Saturation Characteristics
Figure 9. Saturation Characteristics
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5
NVCR8LS025N65S3A
TYPICAL CHARACTERISTICS (continued)
3.0
120
100
80
60
40
20
0
Pulse Duration = 250 μs
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
2.5
2.0
1.5
1.0
0.5
0.0
Duty Cycle = 0.5% Max
I
D
= 75 A
T = 150°C
J
I
D
= 75 A
V
GS
= 10 V
T = 25°C
J
−80
−40
0
40
80
120
160
6
7
8
9
10
V
GS
, Gate to Source Voltage (V)
T , Junction Temperature (°C)
J
Figure 10. RDSON vs. Gate Voltage
Figure 11. Normalized RDSON vs. Junction
Temperature
1.2
1.0
0.8
0.6
0.4
1.2
1.1
1.0
0.9
0.8
V
I
= V
DS
= 3 mA
GS
I
D
= 10 mA
D
−80
−40
0
40
80
120
160
−80
−40
0
40
80
120
160
T , Junction Temperature (°C)
J
T , Junction Temperature (°C)
J
Figure 12. Normalized Gate Threshold Voltage
vs. Temperature
Figure 13. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10
8
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E−01
I
D
= 75 A
Coss
Ciss
V
= 325 V
DD
V
= 260 V
V
DD
= 390 V
DD
6
4
Crss
2
f = 1 MHz
GS
V
= 0 V
0
0,1
1
10
100
1000
0
50
100
150
200
250
V
DS
, Drain to Source Voltage (V)
Q , Gate Charge (nC)
G
Figure 14. Capacitance vs. Drain to Source Volatage
Figure 15. Gate Charge vs. Gate to Source Voltage
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6
NVCR8LS025N65S3A
TYPICAL CHARACTERISTICS (continued)
50
45
40
35
30
25
20
15
10
5
0.04
0.03
0.02
0.01
VGS = 10 V
VGS = 20 V
T
C
= 25°C
0
0
60
120
180
240
300
0
130
260
390
520
650
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 16. EOSS vs. Drain to Source Voltage
Figure 17. On−Resistance Variation vs. Drain
Current and Gate Voltage
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7
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